Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers

T. K. Lin; S. J. Chang; Y. Z. Chiou; C. K. Wang; S. P. Chang; K. T. Lam; Y. S. Sun; B. R. Huang

doi:10.1016/j.sse.2006.03.010

Homoepitaxial ZnSe MIS photodetectors with SiO₂ and BST insulator layers

T. K. Lin, S. J. Chang, Y. Z. Chiou, C. K. Wang, S. P. Chang, K. T. Lam, Y. S. Sun, B. R. Huang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

ZnSe metal-insulator-semiconductor (MIS) photodetectors with SiO₂ and Ba_0.25Sr_0.75TiO₃ (BST) insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large, and the noise equivalent power (NEP) was 1.24 × 10^-13 and 1.9 × 10^-13 for the homoepitaxial ZnSe MIS photodetectors with SiO₂ and BST insulator layers, respectively. The corresponding normalized detectivity (D^*) was 2.55 × 10¹² and 1.67 × 10¹² cm Hz^0.5 W^-1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.

Original language	English
Pages (from-to)	750-753
Number of pages	4
Journal	Solid-State Electronics
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2006.03.010
Publication status	Published - 2006 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2006.03.010

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@article{d3bbeb6902c7418b9539becb54e96d13,

title = "Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers",

abstract = "ZnSe metal-insulator-semiconductor (MIS) photodetectors with SiO2 and Ba0.25Sr0.75TiO3 (BST) insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large, and the noise equivalent power (NEP) was 1.24 × 10-13 and 1.9 × 10-13 for the homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers, respectively. The corresponding normalized detectivity (D*) was 2.55 × 1012 and 1.67 × 1012 cm Hz0.5 W-1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.",

author = "Lin, {T. K.} and Chang, {S. J.} and Chiou, {Y. Z.} and Wang, {C. K.} and Chang, {S. P.} and Lam, {K. T.} and Sun, {Y. S.} and Huang, {B. R.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.",

year = "2006",

month = may,

doi = "10.1016/j.sse.2006.03.010",

language = "English",

volume = "50",

pages = "750--753",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers

AU - Lin, T. K.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Wang, C. K.

AU - Chang, S. P.

AU - Lam, K. T.

AU - Sun, Y. S.

AU - Huang, B. R.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.

PY - 2006/5

Y1 - 2006/5

N2 - ZnSe metal-insulator-semiconductor (MIS) photodetectors with SiO2 and Ba0.25Sr0.75TiO3 (BST) insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large, and the noise equivalent power (NEP) was 1.24 × 10-13 and 1.9 × 10-13 for the homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers, respectively. The corresponding normalized detectivity (D*) was 2.55 × 1012 and 1.67 × 1012 cm Hz0.5 W-1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.

AB - ZnSe metal-insulator-semiconductor (MIS) photodetectors with SiO2 and Ba0.25Sr0.75TiO3 (BST) insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large, and the noise equivalent power (NEP) was 1.24 × 10-13 and 1.9 × 10-13 for the homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers, respectively. The corresponding normalized detectivity (D*) was 2.55 × 1012 and 1.67 × 1012 cm Hz0.5 W-1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.

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DO - 10.1016/j.sse.2006.03.010

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AN - SCOPUS:33744915513

SN - 0038-1101

VL - 50

SP - 750

EP - 753

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Homoepitaxial ZnSe MIS photodetectors with SiO₂ and BST insulator layers

Abstract

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