Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes

S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J. Tang, B. R. Huang

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Homoepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors with ITO, TiW and Ni/Au contact electrodes were fabricated. It was found that barrier heights for electrons were 0.66, 0.695 and 0.715 eV for ITO, TiW and Ni/Au on the homoepitaxial ZnSe, respectively. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au contact electrodes were 120, 50.6 and 28.1 mA/W, which corresponds to quantum efficiencies of 33.5, 14 and 8%, respectively. For a given bandwidth of 100 Hz and a given bias of 1 V, it was found that the corresponding noise equivalent power of our homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au electrodes were 8.14 × 10 -13, 1.73 × 10-12 and 9.25 × 10-13 W, respectively. Furthermore, it was found that the corresponding D * were 8.7 × 1011, 4.09 × 10 11 and 7.65 × 1011 cm Hz0.5 W -1, respectively.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalMaterials Science and Engineering: B
Volume127
Issue number2-3
DOIs
Publication statusPublished - 2006 Feb 25

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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