TY - JOUR
T1 - Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system
AU - Lin, Tzu Shun
AU - Lee, Ching Ting
N1 - Funding Information:
This work was supported from the Ministry of Science and Technology, Taiwan, under MOST-103-2221-E-006-002 and Advanced Optoelectronic Technology Center of the National Cheng Kung University.
Publisher Copyright:
© 2015 Elsevier B.V.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10 11 cm -2 eV -1 , and the complete pinch-off performance. The saturation drain-source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.
AB - The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10 11 cm -2 eV -1 , and the complete pinch-off performance. The saturation drain-source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.
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U2 - 10.1016/j.apsusc.2014.12.179
DO - 10.1016/j.apsusc.2014.12.179
M3 - Article
AN - SCOPUS:84944279688
VL - 354
SP - 71
EP - 73
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -