Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

Tzu Shun Lin, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10 11 cm -2 eV -1 , and the complete pinch-off performance. The saturation drain-source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.

Original languageEnglish
Pages (from-to)71-73
Number of pages3
JournalApplied Surface Science
Volume354
DOIs
Publication statusPublished - 2015 Nov 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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