Abstract
The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher Vgs stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.
| Original language | English |
|---|---|
| Title of host publication | 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual |
| Pages | 560-564 |
| Number of pages | 5 |
| Publication status | Published - 2005 Dec 15 |
| Event | 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States Duration: 2005 Apr 17 → 2005 Apr 21 |
Publication series
| Name | IEEE International Reliability Physics Symposium Proceedings |
|---|---|
| ISSN (Print) | 1541-7026 |
Other
| Other | 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 05-04-17 → 05-04-21 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. / Chen, Jone F.; Wu, Kuo Ming; Lin, Kaung Wan; Su, Yan Kuin; Hsu, S. L.
2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 560-564 (IEEE International Reliability Physics Symposium Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide
AU - Chen, Jone F.
AU - Wu, Kuo Ming
AU - Lin, Kaung Wan
AU - Su, Yan Kuin
AU - Hsu, S. L.
PY - 2005/12/15
Y1 - 2005/12/15
N2 - The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher Vgs stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.
AB - The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher Vgs stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.
UR - http://www.scopus.com/inward/record.url?scp=28744432386&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28744432386&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:28744432386
SN - 0780388038
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 560
EP - 564
BT - 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
ER -