Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide

Jone F. Chen, Kuo Ming Wu, Kaung Wan Lin, Yan Kuin Su, S. L. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Citations (Scopus)

Abstract

The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher Vgs stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.

Original languageEnglish
Title of host publication2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages560-564
Number of pages5
Publication statusPublished - 2005 Dec 15
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
Duration: 2005 Apr 172005 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CountryUnited States
CitySan Jose, CA
Period05-04-1705-04-21

Fingerprint

Hot carriers
Transistors
Degradation
Oxides
Recovery

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, J. F., Wu, K. M., Lin, K. W., Su, Y. K., & Hsu, S. L. (2005). Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual (pp. 560-564). (IEEE International Reliability Physics Symposium Proceedings).
Chen, Jone F. ; Wu, Kuo Ming ; Lin, Kaung Wan ; Su, Yan Kuin ; Hsu, S. L. / Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. pp. 560-564 (IEEE International Reliability Physics Symposium Proceedings).
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Chen, JF, Wu, KM, Lin, KW, Su, YK & Hsu, SL 2005, Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. in 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. IEEE International Reliability Physics Symposium Proceedings, pp. 560-564, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual, San Jose, CA, United States, 05-04-17.

Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. / Chen, Jone F.; Wu, Kuo Ming; Lin, Kaung Wan; Su, Yan Kuin; Hsu, S. L.

2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 560-564 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen JF, Wu KM, Lin KW, Su YK, Hsu SL. Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 560-564. (IEEE International Reliability Physics Symposium Proceedings).