@inproceedings{e41090c61d8b40bbad691d50bf3ffcf8,
title = "Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide",
abstract = "The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher Vgs stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.",
author = "Chen, {Jone F.} and Wu, {Kuo Ming} and Lin, {Kaung Wan} and Su, {Yan Kuin} and Hsu, {S. L.}",
year = "2005",
month = dec,
day = "15",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "560--564",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}