How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment

Jung Chih Tsao, Chuan Pu Liu, Hsin Chiao Fang, Ying Lang Wang

Research output: Contribution to journalReview articlepeer-review

7 Citations (Scopus)

Abstract

Tantalum can change its phase from high resistive β-Ta to low resistive α-Ta phase on a TaN substrate with sequential Ar plasma treatment on the TaN layer surface prior to Ta deposition. The underlined mechanism of phase evolution is proposed based on systematic microstructure examination by high-resolution transmission electron microscopy. The images show that, with argon treatment, the upper part of the TaN film is transformed from amorphous-TaN to a composite phase of bcc-Ta(N) and amorphous-TaN mixture, which is also confirmed by X-ray diffraction patterns. The composite film composed of less nitrogen provides an ideal cubic matrix to confine the stable α-Ta phase to be grown. The α-Ta/bcc-Ta(N) film obtained by proper argon treatment results in film resistivity 10 times lower than the traditional Ta/TaN film.

Original languageEnglish
Pages (from-to)689-693
Number of pages5
JournalMaterials Chemistry and Physics
Volume137
Issue number3
DOIs
Publication statusPublished - 2013 Jan 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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