HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

C. J. Lu, L. A. Bendersky, Kao-Shuo Chang, I. Takeuchi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume751
Publication statusPublished - 2003 Jul 28
EventStructure-Property Relationships of Oxide Surfaces and Interfaces II - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 3

Fingerprint

Defect structures
Epitaxial films
Stacking faults
Thin films
Burgers vector
defects
thin films
High resolution transmission electron microscopy
Dislocations (crystals)
crystal defects
dissociation
Defects
perovskites
atomic structure
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{b9b0133bdc2a4f40850f8511c067b206,
title = "HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3",
abstract = "The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.",
author = "Lu, {C. J.} and Bendersky, {L. A.} and Kao-Shuo Chang and I. Takeuchi",
year = "2003",
month = "7",
day = "28",
language = "English",
volume = "751",
pages = "37--42",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3. / Lu, C. J.; Bendersky, L. A.; Chang, Kao-Shuo; Takeuchi, I.

In: Materials Research Society Symposium - Proceedings, Vol. 751, 28.07.2003, p. 37-42.

Research output: Contribution to journalConference article

TY - JOUR

T1 - HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

AU - Lu, C. J.

AU - Bendersky, L. A.

AU - Chang, Kao-Shuo

AU - Takeuchi, I.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

AB - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0038714134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038714134&partnerID=8YFLogxK

M3 - Conference article

VL - 751

SP - 37

EP - 42

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -