Abstract
The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 37-42 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 751 |
| Publication status | Published - 2003 Jul 28 |
| Event | Structure-Property Relationships of Oxide Surfaces and Interfaces II - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 3 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3. / Lu, C. J.; Bendersky, L. A.; Chang, Kao-Shuo; Takeuchi, I.
In: Materials Research Society Symposium - Proceedings, Vol. 751, 28.07.2003, p. 37-42.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3
AU - Lu, C. J.
AU - Bendersky, L. A.
AU - Chang, Kao-Shuo
AU - Takeuchi, I.
PY - 2003/7/28
Y1 - 2003/7/28
N2 - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.
AB - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.
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M3 - Conference article
VL - 751
SP - 37
EP - 42
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -