HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

C. J. Lu; L. A. Bendersky; K. Chang; I. Takeuchi

HRTEM study of the extended defect structure in epitaxial Ba_0.3Sr_0.7TiO₃ thin films grown on (001) LaAlO₃

C. J. Lu, L. A. Bendersky, K. Chang, I. Takeuchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

The defect structure of a 350-nm-thick epitaxial Ba_0.3Sr_0.7TiO₃ thin film grown on (001) LaAlO₃ has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

Original language	English
Pages (from-to)	37-42
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	751
Publication status	Published - 2003
Event	Structure-Property Relationships of Oxide Surfaces and Interfaces II - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 3

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{b9b0133bdc2a4f40850f8511c067b206,

title = "HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3",

abstract = "The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.",

author = "Lu, {C. J.} and Bendersky, {L. A.} and K. Chang and I. Takeuchi",

year = "2003",

language = "English",

volume = "751",

pages = "37--42",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Structure-Property Relationships of Oxide Surfaces and Interfaces II ; Conference date: 02-12-2002 Through 03-12-2002",

}

TY - JOUR

T1 - HRTEM study of the extended defect structure in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

AU - Lu, C. J.

AU - Bendersky, L. A.

AU - Chang, K.

AU - Takeuchi, I.

PY - 2003

Y1 - 2003

N2 - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

AB - The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0038714134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038714134&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038714134

VL - 751

SP - 37

EP - 42

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Structure-Property Relationships of Oxide Surfaces and Interfaces II

Y2 - 2 December 2002 through 3 December 2002

ER -

HRTEM study of the extended defect structure in epitaxial Ba_0.3Sr_0.7TiO₃ thin films grown on (001) LaAlO₃

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this