Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

W. C. Liu, W. S. Lour, Y. H. Wang, C. Y. Sun, Y. S. Lee, D. F. Guo

Research output: Contribution to conferencePaper

Abstract

A new functional bipolar transistor employing an i-AlGaAs/n+-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.

Original languageEnglish
Pages371-373
Number of pages3
DOIs
Publication statusPublished - 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91-08-2791-08-29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Liu, W. C., Lour, W. S., Wang, Y. H., Sun, C. Y., Lee, Y. S., & Guo, D. F. (1991). Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor. 371-373. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, . https://doi.org/10.7567/ssdm.1991.pc4-8