Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

W. C. Liu; W. S. Lour; Y. H. Wang; C. Y. Sun; Y. S. Lee; D. F. Guo

doi:10.7567/ssdm.1991.pc4-8

Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

W. C. Liu, W. S. Lour, Y. H. Wang, C. Y. Sun, Y. S. Lee, D. F. Guo

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A new functional bipolar transistor employing an i-AlGaAs/n⁺-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.

Original language	English
Pages	371-373
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.pc4-8
Publication status	Published - 1991
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91-08-27 → 91-08-29

All Science Journal Classification (ASJC) codes

General Engineering

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10.7567/ssdm.1991.pc4-8

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title = "Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor",

abstract = "A new functional bipolar transistor employing an i-AlGaAs/n+-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.",

author = "Liu, {W. C.} and Lour, {W. S.} and Wang, {Y. H.} and Sun, {C. Y.} and Lee, {Y. S.} and Guo, {D. F.}",

year = "1991",

doi = "10.7567/ssdm.1991.pc4-8",

language = "English",

pages = "371--373",

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TY - CONF

T1 - Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

AU - Liu, W. C.

AU - Lour, W. S.

AU - Wang, Y. H.

AU - Sun, C. Y.

AU - Lee, Y. S.

AU - Guo, D. F.

PY - 1991

Y1 - 1991

N2 - A new functional bipolar transistor employing an i-AlGaAs/n+-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.

AB - A new functional bipolar transistor employing an i-AlGaAs/n+-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.

UR - http://www.scopus.com/inward/record.url?scp=0025796192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025796192&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.pc4-8

DO - 10.7567/ssdm.1991.pc4-8

M3 - Paper

AN - SCOPUS:0025796192

SP - 371

EP - 373

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

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