A new functional bipolar transistor employing an i-AlGaAs/n+-GaAs superlattice as a confinement and a tunneling layer, simultaneously, has been demonstrated at low temperature. Electrons are injected from emitter to base by resonant-tunneling through the minibands in the superlattice. Whereas, most of holes injecting from base to emitter are reflected by the superlattice and few are tunneling through the superlattice due to their heavier effective mass. A high current gain of 65 and double N-shaped NDR NDR phenomenon with peak-to-valley current ratios of 4:1 and 2.6:1, resulting from on and off resonance through minibands, were obtained in the common-emitter configuration.
|Number of pages||3|
|Publication status||Published - 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91-08-27 → 91-08-29|
All Science Journal Classification (ASJC) codes