Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications

Ke Jing Lee; Tsung Yu Yang; Dei Wei Chou; Yeong Her Wang

doi:10.1109/LED.2022.3188664

Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications

Ke Jing Lee, Tsung Yu Yang, Dei Wei Chou, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene) Barium Zirconate Titanate (P(VDF-TrFE) BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.

Original language	English
Pages (from-to)	1463-1466
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	9
DOIs	https://doi.org/10.1109/LED.2022.3188664
Publication status	Published - 2022 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2022.3188664

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abstract = "This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene) Barium Zirconate Titanate (P(VDF-TrFE) BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.",

author = "Lee, {Ke Jing} and Yang, {Tsung Yu} and Chou, {Dei Wei} and Wang, {Yeong Her}",

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AU - Yang, Tsung Yu

AU - Chou, Dei Wei

AU - Wang, Yeong Her

PY - 2022/9/1

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AB - This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene) Barium Zirconate Titanate (P(VDF-TrFE) BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.

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Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications

Abstract

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