Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure

C. W. Hung, S. Y. Cheng, K. W. Lin, Y. Y. Tsai, P. H. Lai, S. I. Fu, Wen-Chau Liu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

By combining the advantages of a catalytic palladium (Pd thin film) with a high-performance GaAs-based transistor, an interesting hydrogen sensor is fabricated and demonstrated. For the studied device, a 50 Åundoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to suppress the Fermi level pinning effect. The sensing mechanism can be described as the dissociation of hydrogen molecules and the polarization of hydrogen atoms. The drain-source variation ΔIDs is caused by the polarization of a dipolar layer resulting in the modulation of the gate potential and carrier density level. Experimentally, a high hydrogen detection sensitivity SJ value of 275.8 mA/mm-ppm H2/air can be obtained under the 14ppm H2/air gas. Even under a very low hydrogen concentration (≤4.3 ppm H2/air) at 303K, the considerable current variation can be observed. Moreover, the fast hydrogen response is found. Therefore, the studied device reveals the promise for high-performance hydrogen sensor applications.

Original languageEnglish
Pages (from-to)275-280
Number of pages6
JournalAdvanced Materials Research
Volume15-17
Publication statusPublished - 2007 Jan 1
Event5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC 2006 - Vancouver, BC, Canada
Duration: 2006 Jul 42006 Jul 8

Fingerprint

Palladium
Transistors
Thin films
Hydrogen
Air
Polarization
Sensors
Fermi level
Carrier concentration
Modulation
Atoms
Molecules
Gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hung, C. W., Cheng, S. Y., Lin, K. W., Tsai, Y. Y., Lai, P. H., Fu, S. I., & Liu, W-C. (2007). Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure. Advanced Materials Research, 15-17, 275-280.
Hung, C. W. ; Cheng, S. Y. ; Lin, K. W. ; Tsai, Y. Y. ; Lai, P. H. ; Fu, S. I. ; Liu, Wen-Chau. / Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure. In: Advanced Materials Research. 2007 ; Vol. 15-17. pp. 275-280.
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Hung, CW, Cheng, SY, Lin, KW, Tsai, YY, Lai, PH, Fu, SI & Liu, W-C 2007, 'Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure', Advanced Materials Research, vol. 15-17, pp. 275-280.

Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure. / Hung, C. W.; Cheng, S. Y.; Lin, K. W.; Tsai, Y. Y.; Lai, P. H.; Fu, S. I.; Liu, Wen-Chau.

In: Advanced Materials Research, Vol. 15-17, 01.01.2007, p. 275-280.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure

AU - Hung, C. W.

AU - Cheng, S. Y.

AU - Lin, K. W.

AU - Tsai, Y. Y.

AU - Lai, P. H.

AU - Fu, S. I.

AU - Liu, Wen-Chau

PY - 2007/1/1

Y1 - 2007/1/1

N2 - By combining the advantages of a catalytic palladium (Pd thin film) with a high-performance GaAs-based transistor, an interesting hydrogen sensor is fabricated and demonstrated. For the studied device, a 50 Åundoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to suppress the Fermi level pinning effect. The sensing mechanism can be described as the dissociation of hydrogen molecules and the polarization of hydrogen atoms. The drain-source variation ΔIDs is caused by the polarization of a dipolar layer resulting in the modulation of the gate potential and carrier density level. Experimentally, a high hydrogen detection sensitivity SJ value of 275.8 mA/mm-ppm H2/air can be obtained under the 14ppm H2/air gas. Even under a very low hydrogen concentration (≤4.3 ppm H2/air) at 303K, the considerable current variation can be observed. Moreover, the fast hydrogen response is found. Therefore, the studied device reveals the promise for high-performance hydrogen sensor applications.

AB - By combining the advantages of a catalytic palladium (Pd thin film) with a high-performance GaAs-based transistor, an interesting hydrogen sensor is fabricated and demonstrated. For the studied device, a 50 Åundoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to suppress the Fermi level pinning effect. The sensing mechanism can be described as the dissociation of hydrogen molecules and the polarization of hydrogen atoms. The drain-source variation ΔIDs is caused by the polarization of a dipolar layer resulting in the modulation of the gate potential and carrier density level. Experimentally, a high hydrogen detection sensitivity SJ value of 275.8 mA/mm-ppm H2/air can be obtained under the 14ppm H2/air gas. Even under a very low hydrogen concentration (≤4.3 ppm H2/air) at 303K, the considerable current variation can be observed. Moreover, the fast hydrogen response is found. Therefore, the studied device reveals the promise for high-performance hydrogen sensor applications.

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Hung CW, Cheng SY, Lin KW, Tsai YY, Lai PH, Fu SI et al. Hydrogen detection by a GaAs-based transistor with a palladium (Pd) thin film gate structure. Advanced Materials Research. 2007 Jan 1;15-17:275-280.