Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

Shu Yen Liu, Yu-Chuan Lin, Jhao Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee, Wei-Chi Lai, Jinn-Kong Sheu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

An n-GaN photoelectrochemical (PEC) cell with immersed finger-type indium tin oxide (ITO) ohmic contacts was demonstrated in the present study to enhance the hydrogen generation rate. The finger-type ITO ohmic contacts were covered with SiO2 layers to prevent the PEC cell from generating leakage current. Using a 1M NaCl electrolyte and external biases, the typical photocurrent density and gas generation rate of the n-GaN working electrodes with ITO finger contacts were found to be higher than those with Cr/Au finger contacts. The enhancement in photocurrent density or gas generation rate can be attributed to the transparent ITO contacts which allowed the introduction of relatively more photons into the GaN layer. No significant corrosion was observed in the ITO layer after the PEC process compared with the Cr/Au finger contacts which were significantly peeled from the GaN layer. These results indicate that the use of n-GaN working electrodes with finger-type ITO ohmic contacts is a promising approach for PEC cells.

Original languageEnglish
Pages (from-to)A1196-A1201
JournalOptics Express
Volume19
Issue number106
DOIs
Publication statusPublished - 2011 Nov 7

Fingerprint

indium oxides
tin oxides
electric contacts
hydrogen
gases
photocurrents
cells
electrodes
corrosion
leakage
electrolytes
augmentation
photons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Liu, Shu Yen ; Lin, Yu-Chuan ; Ye, Jhao Cheng ; Tu, S. J. ; Huang, F. W. ; Lee, M. L. ; Lai, Wei-Chi ; Sheu, Jinn-Kong. / Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts. In: Optics Express. 2011 ; Vol. 19, No. 106. pp. A1196-A1201.
@article{5fd0d255ff92425ab99d0917e7622e7d,
title = "Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts",
abstract = "An n-GaN photoelectrochemical (PEC) cell with immersed finger-type indium tin oxide (ITO) ohmic contacts was demonstrated in the present study to enhance the hydrogen generation rate. The finger-type ITO ohmic contacts were covered with SiO2 layers to prevent the PEC cell from generating leakage current. Using a 1M NaCl electrolyte and external biases, the typical photocurrent density and gas generation rate of the n-GaN working electrodes with ITO finger contacts were found to be higher than those with Cr/Au finger contacts. The enhancement in photocurrent density or gas generation rate can be attributed to the transparent ITO contacts which allowed the introduction of relatively more photons into the GaN layer. No significant corrosion was observed in the ITO layer after the PEC process compared with the Cr/Au finger contacts which were significantly peeled from the GaN layer. These results indicate that the use of n-GaN working electrodes with finger-type ITO ohmic contacts is a promising approach for PEC cells.",
author = "Liu, {Shu Yen} and Yu-Chuan Lin and Ye, {Jhao Cheng} and Tu, {S. J.} and Huang, {F. W.} and Lee, {M. L.} and Wei-Chi Lai and Jinn-Kong Sheu",
year = "2011",
month = "11",
day = "7",
doi = "10.1364/OE.19.0A1196",
language = "English",
volume = "19",
pages = "A1196--A1201",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "106",

}

Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts. / Liu, Shu Yen; Lin, Yu-Chuan; Ye, Jhao Cheng; Tu, S. J.; Huang, F. W.; Lee, M. L.; Lai, Wei-Chi; Sheu, Jinn-Kong.

In: Optics Express, Vol. 19, No. 106, 07.11.2011, p. A1196-A1201.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

AU - Liu, Shu Yen

AU - Lin, Yu-Chuan

AU - Ye, Jhao Cheng

AU - Tu, S. J.

AU - Huang, F. W.

AU - Lee, M. L.

AU - Lai, Wei-Chi

AU - Sheu, Jinn-Kong

PY - 2011/11/7

Y1 - 2011/11/7

N2 - An n-GaN photoelectrochemical (PEC) cell with immersed finger-type indium tin oxide (ITO) ohmic contacts was demonstrated in the present study to enhance the hydrogen generation rate. The finger-type ITO ohmic contacts were covered with SiO2 layers to prevent the PEC cell from generating leakage current. Using a 1M NaCl electrolyte and external biases, the typical photocurrent density and gas generation rate of the n-GaN working electrodes with ITO finger contacts were found to be higher than those with Cr/Au finger contacts. The enhancement in photocurrent density or gas generation rate can be attributed to the transparent ITO contacts which allowed the introduction of relatively more photons into the GaN layer. No significant corrosion was observed in the ITO layer after the PEC process compared with the Cr/Au finger contacts which were significantly peeled from the GaN layer. These results indicate that the use of n-GaN working electrodes with finger-type ITO ohmic contacts is a promising approach for PEC cells.

AB - An n-GaN photoelectrochemical (PEC) cell with immersed finger-type indium tin oxide (ITO) ohmic contacts was demonstrated in the present study to enhance the hydrogen generation rate. The finger-type ITO ohmic contacts were covered with SiO2 layers to prevent the PEC cell from generating leakage current. Using a 1M NaCl electrolyte and external biases, the typical photocurrent density and gas generation rate of the n-GaN working electrodes with ITO finger contacts were found to be higher than those with Cr/Au finger contacts. The enhancement in photocurrent density or gas generation rate can be attributed to the transparent ITO contacts which allowed the introduction of relatively more photons into the GaN layer. No significant corrosion was observed in the ITO layer after the PEC process compared with the Cr/Au finger contacts which were significantly peeled from the GaN layer. These results indicate that the use of n-GaN working electrodes with finger-type ITO ohmic contacts is a promising approach for PEC cells.

UR - http://www.scopus.com/inward/record.url?scp=80755181045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755181045&partnerID=8YFLogxK

U2 - 10.1364/OE.19.0A1196

DO - 10.1364/OE.19.0A1196

M3 - Article

VL - 19

SP - A1196-A1201

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 106

ER -