TY - JOUR
T1 - Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts
AU - Tsai, Chia Hung
AU - Hung, Chen I.
AU - Yang, Cheng Fu
AU - Houng, Mau Phon
N1 - Funding Information:
We gratefully acknowledge the National Science Council of Taiwan under Contract No. NSC-96-2221-E-006-082-MY2 and NSC-97-2221-E-006-239-MY2.
PY - 2010/11/1
Y1 - 2010/11/1
N2 - We utilize hydrogen peroxide (H 2 O 2 ) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H 2 O 2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576-580 nm with respect to deep level of oxygen interstitials introduced by H 2 O 2 treatment. The threshold formation of ZnO 2 resistive layer on H 2 O 2 -treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 × 10 -11 A/cm 2 at -2 V) than Pt SC on the H 2 O 2 -treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current-voltage, capacitance-voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky behavior is given.
AB - We utilize hydrogen peroxide (H 2 O 2 ) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H 2 O 2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576-580 nm with respect to deep level of oxygen interstitials introduced by H 2 O 2 treatment. The threshold formation of ZnO 2 resistive layer on H 2 O 2 -treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 × 10 -11 A/cm 2 at -2 V) than Pt SC on the H 2 O 2 -treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current-voltage, capacitance-voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky behavior is given.
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U2 - 10.1016/j.apsusc.2010.07.043
DO - 10.1016/j.apsusc.2010.07.043
M3 - Article
AN - SCOPUS:78049529168
SN - 0169-4332
VL - 257
SP - 610
EP - 615
JO - Applied Surface Science
JF - Applied Surface Science
IS - 2
ER -