TY - JOUR
T1 - Hydrogen sensing characteristics of a metal-oxide-semiconductor diode with bimetallic catalysts and a gaox dielectric
AU - Chen, Hong Yu
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received April 16, 2019; revised May 10, 2019; accepted May 13, 2019. Date of publication May 31, 2019; date of current version June 19, 2019. This work was supported by the Ministry of Science and Technology of China under Contract MOST 107-2221-E-006-215. The review of this paper was arranged by Editor I. Kymissis. (Corresponding author: Wen-Chau Liu.) The authors are with the Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 70101, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/7
Y1 - 2019/7
N2 - A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.
AB - A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=85067650657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067650657&partnerID=8YFLogxK
U2 - 10.1109/TED.2019.2917206
DO - 10.1109/TED.2019.2917206
M3 - Article
AN - SCOPUS:85067650657
SN - 0018-9383
VL - 66
SP - 3144
EP - 3150
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
M1 - 8727417
ER -