Hydrogen sensing characteristics of a metal-oxide-semiconductor diode with bimetallic catalysts and a gaox dielectric

Hong Yu Chen, Wen Chau Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.

Original languageEnglish
Article number8727417
Pages (from-to)3144-3150
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number7
DOIs
Publication statusPublished - 2019 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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