Hydrogen sensing characteristics of a Pd/AlGaN/GaN schottky diode

Tsung Han Tsai; Huey Ing Chen; Kun Wei Lin; Ching Wen Hung; Chia Hao Hsu; Tzu Pin Chen; Li Yang Chen; Kuei Yi Chu; Chung Fu Chang; Wen Chau Liu

doi:10.1143/APEX.1.041102

Hydrogen sensing characteristics of a Pd/AlGaN/GaN schottky diode

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Ching Wen Hung, Chia Hao Hsu, Tzu Pin Chen, Li Yang Chen, Kuei Yi Chu, Chung Fu Chang, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this paper, the interesting hydrogen sensing properties of a Pd-gate AIGaN/GaN Schottky diode are Investigated. A significantly low detection limit of 850ppb H₂/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04 × 10⁵ at 423 K when exposure to a 9660 ppm H₂/alr gas. The transient response time and reversibility of the studied device can be improved by Increasing the operating, temperature.

Original language	English
Pages (from-to)	411021-411023
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	4
DOIs	https://doi.org/10.1143/APEX.1.041102
Publication status	Published - 2008 Apr 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Hydrogen sensing characteristics of a Pd/AlGaN/GaN schottky diode",

abstract = "In this paper, the interesting hydrogen sensing properties of a Pd-gate AIGaN/GaN Schottky diode are Investigated. A significantly low detection limit of 850ppb H2/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04 × 105 at 423 K when exposure to a 9660 ppm H2/alr gas. The transient response time and reversibility of the studied device can be improved by Increasing the operating, temperature.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Lin, {Kun Wei} and Hung, {Ching Wen} and Hsu, {Chia Hao} and Chen, {Tzu Pin} and Chen, {Li Yang} and Chu, {Kuei Yi} and Chang, {Chung Fu} and Liu, {Wen Chau}",

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doi = "10.1143/APEX.1.041102",

language = "English",

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TY - JOUR

T1 - Hydrogen sensing characteristics of a Pd/AlGaN/GaN schottky diode

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Hung, Ching Wen

AU - Hsu, Chia Hao

AU - Chen, Tzu Pin

AU - Chen, Li Yang

AU - Chu, Kuei Yi

AU - Chang, Chung Fu

AU - Liu, Wen Chau

PY - 2008/4/1

Y1 - 2008/4/1

N2 - In this paper, the interesting hydrogen sensing properties of a Pd-gate AIGaN/GaN Schottky diode are Investigated. A significantly low detection limit of 850ppb H2/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04 × 105 at 423 K when exposure to a 9660 ppm H2/alr gas. The transient response time and reversibility of the studied device can be improved by Increasing the operating, temperature.

AB - In this paper, the interesting hydrogen sensing properties of a Pd-gate AIGaN/GaN Schottky diode are Investigated. A significantly low detection limit of 850ppb H2/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04 × 105 at 423 K when exposure to a 9660 ppm H2/alr gas. The transient response time and reversibility of the studied device can be improved by Increasing the operating, temperature.

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JO - Applied Physics Express

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Hydrogen sensing characteristics of a Pd/AlGaN/GaN schottky diode

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