Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode

Huey-Ing Chen, Kai Chieh Chuang, Ching Hong Chang, Wei Cheng Chen, I-Ping Liu, Wen-Chau Liu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOxdielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 × 105(under an introduced 1% H2/air gas) and a very low detection limit of 1 ppm H2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOxlayer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.

Original languageEnglish
Pages (from-to)408-414
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume246
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Schottky diodes
Hydrogen
Diodes
hydrogen
Gases
Air
air
gases
Hydrogen peroxide
Hydrogen Peroxide
Atmospheric humidity
hydrogen peroxide
time constant
aluminum gallium nitride
humidity
Recovery
recovery
Molecules
dissociation
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode",
abstract = "Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOxdielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 × 105(under an introduced 1{\%} H2/air gas) and a very low detection limit of 1 ppm H2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOxlayer. A response (recovery) time constant of 33(17) s is found upon exposure to 1{\%} H2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.",
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Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode. / Chen, Huey-Ing; Chuang, Kai Chieh; Chang, Ching Hong; Chen, Wei Cheng; Liu, I-Ping; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 246, 01.01.2017, p. 408-414.

Research output: Contribution to journalArticle

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T1 - Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode

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AU - Chuang, Kai Chieh

AU - Chang, Ching Hong

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AU - Liu, I-Ping

AU - Liu, Wen-Chau

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