Hydrogen sensing characteristics of a Pd/GaAs semiconductor transistor-type sensor

C. W. Hung, Huey-Ing Chen, D. F. Guo, J. H. Tsai, S. Y. Cheng, Y. Y. Tsai, T. P. Chen, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An interesting Pd-GaAs high electron mobility transistor (HEMT) hydrogen sensor is fabricated and studied. For the studied device, a 5 nm-thick undoped GaAs cap layer is grown to suppress the oxidation of the underneath AlGaAs layer. Comprehensive analysis on the electrical properties including transconductance (gm), channel conductance (gD), and gate-source voltage shift (ΔVGS) is presented. Experimentally the maximum variation of transconductance (Δgm) is about 46.8 mS/mm while the maximum transconductance (gm,max) is still maintained at about 176 mS/mm. A high channel conductance variation (ΔgD) of 25.1 mS/mm is obtained in 9970 ppm H2/air gas at 50°C. This indicates that, in hydrogen-containing ambience, the channel resistance reduces in the linear region of transistor operation. The negative ΔVGS value in hydrogen-containing ambiance means that a lower VGS value is sufficient to maintain the same drain current (ID) value than that in air.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages2043-2046
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 2007 Jun 102007 Jun 14

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period07-06-1007-06-14

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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