Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

Tai You Chen; Huey Ing Chen; Chien Chang Huang; Chi Shiang Hsu; Po Shun Chiu; Po Cheng Chou; Rong Chau Liu; Wen Chau Liu

doi:10.1109/TED.2011.2166269

Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

Tai You Chen, Huey Ing Chen, Chien Chang Huang, Chi Shiang Hsu, Po Shun Chiu, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response S_r of 2.05 × 10⁵ and a large Schottky barrier height variation ratio (Δφ_B/φ_air) of 36.3% upon exposure to a 1% H₂/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

Original language	English
Article number	6032084
Pages (from-to)	4079-4086
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	11
DOIs	https://doi.org/10.1109/TED.2011.2166269
Publication status	Published - 2011 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2166269

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title = "Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach",

abstract = "Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφB/φair) of 36.3% upon exposure to a 1% H2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.",

author = "Chen, {Tai You} and Chen, {Huey Ing} and Huang, {Chien Chang} and Hsu, {Chi Shiang} and Chiu, {Po Shun} and Chou, {Po Cheng} and Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received March 26, 2011; revised July 21, 2011; accepted August 17, 2011. Date of publication October 3, 2011; date of current version October 21, 2011. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-237-MY3. The review of this paper was arranged by Editor A. M. Ionescu.",

year = "2011",

month = nov,

doi = "10.1109/TED.2011.2166269",

language = "English",

volume = "58",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

AU - Chen, Tai You

AU - Chen, Huey Ing

AU - Huang, Chien Chang

AU - Hsu, Chi Shiang

AU - Chiu, Po Shun

AU - Chou, Po Cheng

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received March 26, 2011; revised July 21, 2011; accepted August 17, 2011. Date of publication October 3, 2011; date of current version October 21, 2011. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-237-MY3. The review of this paper was arranged by Editor A. M. Ionescu.

PY - 2011/11

Y1 - 2011/11

N2 - Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφB/φair) of 36.3% upon exposure to a 1% H2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

AB - Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφB/φair) of 36.3% upon exposure to a 1% H2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

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Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

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