Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

Tai You Chen, Huey Ing Chen, Chien Chang Huang, Chi Shiang Hsu, Po Shun Chiu, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

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Abstract

Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφBair) of 36.3% upon exposure to a 1% H2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

Original languageEnglish
Article number6032084
Pages (from-to)4079-4086
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, T. Y., Chen, H. I., Huang, C. C., Hsu, C. S., Chiu, P. S., Chou, P. C., Liu, R. C., & Liu, W. C. (2011). Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach. IEEE Transactions on Electron Devices, 58(11), 4079-4086. [6032084]. https://doi.org/10.1109/TED.2011.2166269