TY - JOUR
T1 - Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode
AU - Liu, I. Ping
AU - Chang, Ching Hong
AU - Huang, Yen Ming
AU - Lin, Kun Wei
N1 - Funding Information:
This research is partially sponsored by Chaoyang University of Technology (CYUT) and the Ministry of Education , Taiwan, under the project: “The R&D and the cultivation of talent for Health-promotion products". Technical assistance from Miss Hui-Jung Shih, Instrument Center, National Cheng-Kung University is appreciated.
Funding Information:
This research is partially sponsored by Chaoyang University of Technology (CYUT) and the Ministry of Education, Taiwan, under the project: “The R&D and the cultivation of talent for Health-promotion products”. Technical assistance from Miss Hui-Jung Shih, Instrument Center, National Cheng-Kung University is appreciated.
Publisher Copyright:
© 2019 Hydrogen Energy Publications LLC
PY - 2019/3/1
Y1 - 2019/3/1
N2 - Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1% H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1% H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.
AB - Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1% H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1% H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.
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U2 - 10.1016/j.ijhydene.2019.01.056
DO - 10.1016/j.ijhydene.2019.01.056
M3 - Article
AN - SCOPUS:85060875356
SN - 0360-3199
VL - 44
SP - 5748
EP - 5754
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
IS - 12
ER -