Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga 0.7As MOS Schottky diode

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Chun Tsen Lu, Wen-Chau Liu

Research output: Contribution to journalArticle

35 Citations (Scopus)


An interesting hydrogen sensor based on a Pt-oxide-Al0.3Ga 0.7As MOS structure is fabricated and studied. The transient response and hydrogen detection sensitivity of the studied device under different hydrogen concentrations, temperature and applied voltages are measured. In addition, the kinetic and thermodynamic properties of hydrogen adsorption are studied and discussed. Experimentally, the studied device shows significant advantages of extremely low hydrogen concentration (15 ppm H2/air) detection capability, high hydrogen detection sensitivity (20 in 9090 ppm H 2/air gas), short response time, wide temperature operating regime and good hydrogen detection ability under bi-directional applied bias. Based on these good properties, therefore, the studied device provides a promise for high-performance solid-state hydrogen sensor applications.

Original languageEnglish
Pages (from-to)425-430
Number of pages6
JournalSensors and Actuators, B: Chemical
Issue number2-3
Publication statusPublished - 2004 May 1

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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