Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Wei Hsi Hsu, Huns Ming Chuang, Chun Yuan Chen, Wen-Chau Liu

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28 Citations (Scopus)


Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

Original languageEnglish
Pages (from-to)778-782
Number of pages5
JournalSemiconductor Science and Technology
Issue number6
Publication statusPublished - 2004 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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