Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Wei Hsi Hsu; Huns Ming Chuang; Chun Yuan Chen; Wen Chau Liu

doi:10.1088/0268-1242/19/6/022

Hydrogen sensing characteristics of Pd-and Pt-Al_0.3Ga _0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng
, Yan Ying Tsai
, Kun Wei Lin
, Huey Ing Chen
, Wei Hsi Hsu
, Huns Ming Chuang
, Chun Yuan Chen
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Pd- and Pt-Al_0.3Ga_0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al _0.3Ga_0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole^-1, respectively.

Original language	English
Pages (from-to)	778-782
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	19
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/19/6/022
Publication status	Published - 2004 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/19/6/022

Cite this

@article{07a7cb0401a444e48a5948275bdf8366,

title = "Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes",

abstract = "Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.",

author = "Cheng, \{Chin Chuan\} and Tsai, \{Yan Ying\} and Lin, \{Kun Wei\} and Chen, \{Huey Ing\} and Hsu, \{Wei Hsi\} and Chuang, \{Huns Ming\} and Chen, \{Chun Yuan\} and Liu, \{Wen Chau\}",

year = "2004",

month = jun,

doi = "10.1088/0268-1242/19/6/022",

language = "English",

volume = "19",

pages = "778--782",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hsu, Wei Hsi

AU - Chuang, Huns Ming

AU - Chen, Chun Yuan

AU - Liu, Wen Chau

PY - 2004/6

Y1 - 2004/6

N2 - Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

AB - Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

UR - https://www.scopus.com/pages/publications/2942533041

UR - https://www.scopus.com/pages/publications/2942533041#tab=citedBy

U2 - 10.1088/0268-1242/19/6/022

DO - 10.1088/0268-1242/19/6/022

M3 - Article

AN - SCOPUS:2942533041

SN - 0268-1242

VL - 19

SP - 778

EP - 782

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

Hydrogen sensing characteristics of Pd-and Pt-Al_0.3Ga _0.7As metal-semiconductor (MS) Schottky diodes

Abstract

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