Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

Po Cheng Chou, Huey Ing Chen, I. Ping Liu, Chun Chia Chen, Jian Kai Liou, Cheng Jing Lai, Wen Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)


A Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) structure is used to fabricate interesting Schottky diode-type hydrogen sensors. The employment of SiO2-NPs could effectively increase the specific surface area of Pd catalytic metal and the Schottky barrier height. Good hydrogen sensing performance is obtained. Experimentally, as compared to a conventional Pd/AlGaN MS diode, a significant 34.5-fold improvement on hydrogen sensing response is obtained under an introduced 1% H2/air gas at 300 K when a 10 wt% concentration of SiO2-NPs is employed in the studied device. Yet, the increase in SiO2-NP concentration relatively deteriorates the ability to detect very low hydrogen concentration levels (1 ppm H2/air). In addition, the increase in SiO2-NP concentration creates a decrease and increase on response and recovery time constants of transient behaviors, respectively.

Original languageEnglish
Pages (from-to)20313-20318
Number of pages6
JournalInternational Journal of Hydrogen Energy
Issue number35
Publication statusPublished - 2014 Dec 3

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

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