Hydrogen sensing characteristics of porous Pd/SiO2/GaN schottky diode

Yu Jen Chen, Yen I. Chou, Chung Yeh Wu, Shih Da Lin, Yu Wei Huang, Huey-Ing Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the porous Pd/SiO2/GaN Schottky diode was fabricated by thermal evaporation (TE) for hydrogen sensing. The current-voltage (I-V) characteristics of the studied device were measured under hydrogen concentrations of 15 - 9970ppm H2/air and temperatures of 303 - 515K. Furthermore, the hydrogen sensing performances of this device were investigated via the steady-state and transient detections. From experimental results, the studied device demonstrated excellent sensing performances with low detection limit (about ppb level), wide detection range (15 -9970 ppm), high sensitivity, and fast response and recovery rates (within several seconds for detection of 9970ppm H2/air). For the detection of 15 ppm at 423 K, the relative sensitivity even reached to 490%. In addition, the relative sensitivity was increased as either the hydrogen concentration or the detection temperature was incresaed. As compared with the dense structured device, the porous structured Pd/ SiO2/GaN Schottky diode exhibited more superior sensing characteristics, especially at low hydrogen concentration with a relatively high sensitivity.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages793-796
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Chen, Y. J., Chou, Y. I., Wu, C. Y., Lin, S. D., Huang, Y. W., & Chen, H-I. (2007). Hydrogen sensing characteristics of porous Pd/SiO2/GaN schottky diode. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 793-796). [4450245] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450245