Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Po Cheng Chou; Huey Ing Chen; I. Ping Liu; Chun Chia Chen; Jian Kai Liou; Kai Siang Hsu; Wen Chau Liu

doi:10.1016/j.ijhydene.2014.10.142

Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Po Cheng Chou, Huey Ing Chen, I. Ping Liu, Chun Chia Chen, Jian Kai Liou, Kai Siang Hsu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H₂/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H₂/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.

Original language	English
Pages (from-to)	729-734
Number of pages	6
Journal	International Journal of Hydrogen Energy
Volume	40
Issue number	1
DOIs	https://doi.org/10.1016/j.ijhydene.2014.10.142
Publication status	Published - 2015 Jan 5

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ijhydene.2014.10.142

Cite this

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title = "Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device",

abstract = "An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.",

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AU - Chou, Po Cheng

AU - Chen, Huey Ing

AU - Liu, I. Ping

AU - Chen, Chun Chia

AU - Liou, Jian Kai

AU - Hsu, Kai Siang

AU - Liu, Wen Chau

PY - 2015/1/5

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Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Abstract

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