Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Po Cheng Chou, Huey-Ing Chen, I-Ping Liu, Chun Chia Chen, Jian Kai Liou, Kai Siang Hsu, Wen-Chau Liu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H 2 /air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H 2 /air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.

Original languageEnglish
Pages (from-to)729-734
Number of pages6
JournalInternational Journal of Hydrogen Energy
Volume40
Issue number1
DOIs
Publication statusPublished - 2015 Jan 5

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All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

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