Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Po Cheng Chou; Huey Ing Chen; I. Ping Liu; Chun Chia Chen; Jian Kai Liou; Kai Siang Hsu; Wen Chau Liu

doi:10.1016/j.ijhydene.2014.10.142

Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Po Cheng Chou
, Huey Ing Chen
, I. Ping Liu
, Chun Chia Chen
, Jian Kai Liou
, Kai Siang Hsu
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H₂/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H₂/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.

Original language	English
Pages (from-to)	729-734
Number of pages	6
Journal	International Journal of Hydrogen Energy
Volume	40
Issue number	1
DOIs	https://doi.org/10.1016/j.ijhydene.2014.10.142
Publication status	Published - 2015 Jan 5

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

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10.1016/j.ijhydene.2014.10.142

Cite this

@article{25de4f308e3c4d4ab6b321ecce497db9,

title = "Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device",

abstract = "An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.",

author = "Chou, \{Po Cheng\} and Chen, \{Huey Ing\} and Liu, \{I. Ping\} and Chen, \{Chun Chia\} and Liou, \{Jian Kai\} and Hsu, \{Kai Siang\} and Liu, \{Wen Chau\}",

year = "2015",

month = jan,

day = "5",

doi = "10.1016/j.ijhydene.2014.10.142",

language = "English",

volume = "40",

pages = "729--734",

journal = "International Journal of Hydrogen Energy",

issn = "0360-3199",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

AU - Chou, Po Cheng

AU - Chen, Huey Ing

AU - Liu, I. Ping

AU - Chen, Chun Chia

AU - Liou, Jian Kai

AU - Hsu, Kai Siang

AU - Liu, Wen Chau

PY - 2015/1/5

Y1 - 2015/1/5

N2 - An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.

AB - An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RF) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (ΔR/R)), an extremely low detecting limit (<50 ppm H2/air), a high sensing response speed (7 s), a lower operating temperature (350 °C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications.

UR - https://www.scopus.com/pages/publications/84916238156

UR - https://www.scopus.com/pages/publications/84916238156#tab=citedBy

U2 - 10.1016/j.ijhydene.2014.10.142

DO - 10.1016/j.ijhydene.2014.10.142

M3 - Article

AN - SCOPUS:84916238156

SN - 0360-3199

VL - 40

SP - 729

EP - 734

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

IS - 1

ER -

Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Abstract

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All Science Journal Classification (ASJC) codes

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