Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

Huey Ing Chen; Yu Chih Cheng; Ching Hong Chang; Wei Cheng Chen; I. Ping Liu; Kun Wei Lin; Wen Chau Liu

doi:10.1016/j.snb.2017.03.039

Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

Huey Ing Chen
, Yu Chih Cheng
, Ching Hong Chang
, Wei Cheng Chen
, I. Ping Liu
, Kun Wei Lin
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A new Pd nanoparticle (NP)/Pd film/GaN-based Schottky diode-type hydrogen sensor is fabricated and studied. Pd NPs are formed using a proper photochemical approach based on a drop of PdCl₂ solution and UV illumination. Experimentally, excellent hydrogen sensing performance, including an extremely high sensing response (4.2 × 10⁶@1% H₂/air gas) with a very low detection limit (≤0.8 ppm H₂/air) is obtained at 25 °C. This is mainly caused by the enhanced surface area/volume ratio of the Pd NPs and the catalytic reactivity of the Pd film. Furthermore, the studied device exhibits sensitive responses to humid ambiences at 25 °C. Therefore, based on the reported benefits and relatively simple process flow, the studied device is a promising high-performance hydrogen sensor.

Original language	English
Pages (from-to)	514-519
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	247
DOIs	https://doi.org/10.1016/j.snb.2017.03.039
Publication status	Published - 2017 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2017.03.039

Cite this

@article{b1b0a3922d444c19bdcdf50a102c53e6,

title = "Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode",

abstract = "A new Pd nanoparticle (NP)/Pd film/GaN-based Schottky diode-type hydrogen sensor is fabricated and studied. Pd NPs are formed using a proper photochemical approach based on a drop of PdCl2 solution and UV illumination. Experimentally, excellent hydrogen sensing performance, including an extremely high sensing response (4.2 × 106@1\% H2/air gas) with a very low detection limit (≤0.8 ppm H2/air) is obtained at 25 °C. This is mainly caused by the enhanced surface area/volume ratio of the Pd NPs and the catalytic reactivity of the Pd film. Furthermore, the studied device exhibits sensitive responses to humid ambiences at 25 °C. Therefore, based on the reported benefits and relatively simple process flow, the studied device is a promising high-performance hydrogen sensor.",

author = "Chen, \{Huey Ing\} and Cheng, \{Yu Chih\} and Chang, \{Ching Hong\} and Chen, \{Wei Cheng\} and Liu, \{I. Ping\} and Lin, \{Kun Wei\} and Liu, \{Wen Chau\}",

year = "2017",

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doi = "10.1016/j.snb.2017.03.039",

language = "English",

volume = "247",

pages = "514--519",

journal = "Sensors and Actuators, B: Chemical",

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TY - JOUR

T1 - Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

AU - Chen, Huey Ing

AU - Cheng, Yu Chih

AU - Chang, Ching Hong

AU - Chen, Wei Cheng

AU - Liu, I. Ping

AU - Lin, Kun Wei

AU - Liu, Wen Chau

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A new Pd nanoparticle (NP)/Pd film/GaN-based Schottky diode-type hydrogen sensor is fabricated and studied. Pd NPs are formed using a proper photochemical approach based on a drop of PdCl2 solution and UV illumination. Experimentally, excellent hydrogen sensing performance, including an extremely high sensing response (4.2 × 106@1% H2/air gas) with a very low detection limit (≤0.8 ppm H2/air) is obtained at 25 °C. This is mainly caused by the enhanced surface area/volume ratio of the Pd NPs and the catalytic reactivity of the Pd film. Furthermore, the studied device exhibits sensitive responses to humid ambiences at 25 °C. Therefore, based on the reported benefits and relatively simple process flow, the studied device is a promising high-performance hydrogen sensor.

AB - A new Pd nanoparticle (NP)/Pd film/GaN-based Schottky diode-type hydrogen sensor is fabricated and studied. Pd NPs are formed using a proper photochemical approach based on a drop of PdCl2 solution and UV illumination. Experimentally, excellent hydrogen sensing performance, including an extremely high sensing response (4.2 × 106@1% H2/air gas) with a very low detection limit (≤0.8 ppm H2/air) is obtained at 25 °C. This is mainly caused by the enhanced surface area/volume ratio of the Pd NPs and the catalytic reactivity of the Pd film. Furthermore, the studied device exhibits sensitive responses to humid ambiences at 25 °C. Therefore, based on the reported benefits and relatively simple process flow, the studied device is a promising high-performance hydrogen sensor.

UR - https://www.scopus.com/pages/publications/85015926109

UR - https://www.scopus.com/pages/publications/85015926109#tab=citedBy

U2 - 10.1016/j.snb.2017.03.039

DO - 10.1016/j.snb.2017.03.039

M3 - Article

AN - SCOPUS:85015926109

SN - 0925-4005

VL - 247

SP - 514

EP - 519

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

ER -

Hydrogen sensing performance of a Pd nanoparticle/Pd film/GaN-based diode

Abstract

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