Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

Huey-Ing Chen, Ching Hong Chang, Hsin Hau Lu, I-Ping Liu, Wei Cheng Chen, Bu Yuan Ke, Wen-Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1% H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

Original languageEnglish
Pages (from-to)852-859
Number of pages8
JournalSensors and Actuators, B: Chemical
Volume262
DOIs
Publication statusPublished - 2018 Jun 1

Fingerprint

semiconductor diodes
Schottky diodes
metal oxide semiconductors
Hydrogen
Diodes
Metals
Semiconductor diodes
hydrogen
Hafnium oxides
Adsorption
high speed
hafnium oxides
Air
adsorption
air
Temperature
Sputtering
operating temperature
Atmospheric humidity
time constant

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode",
abstract = "A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1{\%} H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.",
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Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode. / Chen, Huey-Ing; Chang, Ching Hong; Lu, Hsin Hau; Liu, I-Ping; Chen, Wei Cheng; Ke, Bu Yuan; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 262, 01.06.2018, p. 852-859.

Research output: Contribution to journalArticle

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T1 - Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

AU - Chen, Huey-Ing

AU - Chang, Ching Hong

AU - Lu, Hsin Hau

AU - Liu, I-Ping

AU - Chen, Wei Cheng

AU - Ke, Bu Yuan

AU - Liu, Wen-Chau

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