Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode

Ching Hong Chang, Kun Wei Lin, Hsin Hau Lu, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

Original languageEnglish
Pages (from-to)19816-19824
Number of pages9
JournalInternational Journal of Hydrogen Energy
Volume43
Issue number42
DOIs
Publication statusPublished - 2018 Oct 18

Fingerprint

Schottky diodes
metal oxide semiconductors
Diodes
Hydrogen
hydrogen
Metals
Semiconductor diodes
semiconductor diodes
Oxide semiconductors
peroxides
hydrogen peroxide
Hydrogen peroxide
Sputtering
humidity
Atmospheric humidity
sputtering
recovery
chips
high speed
Adsorption

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

Cite this

Chang, Ching Hong ; Lin, Kun Wei ; Lu, Hsin Hau ; Liu, Rong Chau ; Liu, Wen Chau. / Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode. In: International Journal of Hydrogen Energy. 2018 ; Vol. 43, No. 42. pp. 19816-19824.
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abstract = "An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.",
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Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode. / Chang, Ching Hong; Lin, Kun Wei; Lu, Hsin Hau; Liu, Rong Chau; Liu, Wen Chau.

In: International Journal of Hydrogen Energy, Vol. 43, No. 42, 18.10.2018, p. 19816-19824.

Research output: Contribution to journalArticle

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AU - Chang, Ching Hong

AU - Lin, Kun Wei

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AU - Liu, Wen Chau

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