Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode

Wei Cheng Chen, Huey Ing Chen, Po Cheng Chou, Ching Hong Chang, Yung Jen Chiou, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.

Original languageEnglish
Title of host publication2015 9th International Conference on Sensing Technology, ICST 2015
PublisherIEEE Computer Society
Pages355-358
Number of pages4
ISBN (Electronic)9781479963140
DOIs
Publication statusPublished - 2016 Mar 21
Event9th International Conference on Sensing Technology, ICST 2015 - Auckland, New Zealand
Duration: 2015 Dec 82015 Dec 11

Publication series

NameProceedings of the International Conference on Sensing Technology, ICST
Volume2016-March
ISSN (Print)2156-8065
ISSN (Electronic)2156-8073

Other

Other9th International Conference on Sensing Technology, ICST 2015
CountryNew Zealand
CityAuckland
Period15-12-0815-12-11

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering

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