@inproceedings{b9c7df947cd54b5b8200798e8cdfe448,
title = "Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode",
abstract = "In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.",
author = "Chen, {Wei Cheng} and Chen, {Huey Ing} and Chou, {Po Cheng} and Chang, {Ching Hong} and Chiou, {Yung Jen} and Liu, {Wen Chau}",
year = "2016",
month = mar,
day = "21",
doi = "10.1109/ICSensT.2015.7438422",
language = "English",
series = "Proceedings of the International Conference on Sensing Technology, ICST",
publisher = "IEEE Computer Society",
pages = "355--358",
booktitle = "2015 9th International Conference on Sensing Technology, ICST 2015",
address = "United States",
note = "9th International Conference on Sensing Technology, ICST 2015 ; Conference date: 08-12-2015 Through 11-12-2015",
}