Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode

Wei Cheng Chen, Huey-Ing Chen, Po Cheng Chou, Ching Hong Chang, Yung Jen Chiou, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.

Original languageEnglish
Title of host publication2015 9th International Conference on Sensing Technology, ICST 2015
PublisherIEEE Computer Society
Pages355-358
Number of pages4
ISBN (Electronic)9781479963140
DOIs
Publication statusPublished - 2016 Mar 21
Event9th International Conference on Sensing Technology, ICST 2015 - Auckland, New Zealand
Duration: 2015 Dec 82015 Dec 11

Publication series

NameProceedings of the International Conference on Sensing Technology, ICST
Volume2016-March
ISSN (Print)2156-8065
ISSN (Electronic)2156-8073

Other

Other9th International Conference on Sensing Technology, ICST 2015
CountryNew Zealand
CityAuckland
Period15-12-0815-12-11

Fingerprint

Diodes
Hydrogen
Air
Gases
Recovery
Sensors

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering

Cite this

Chen, W. C., Chen, H-I., Chou, P. C., Chang, C. H., Chiou, Y. J., & Liu, W-C. (2016). Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode. In 2015 9th International Conference on Sensing Technology, ICST 2015 (pp. 355-358). [7438422] (Proceedings of the International Conference on Sensing Technology, ICST; Vol. 2016-March). IEEE Computer Society. https://doi.org/10.1109/ICSensT.2015.7438422
Chen, Wei Cheng ; Chen, Huey-Ing ; Chou, Po Cheng ; Chang, Ching Hong ; Chiou, Yung Jen ; Liu, Wen-Chau. / Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode. 2015 9th International Conference on Sensing Technology, ICST 2015. IEEE Computer Society, 2016. pp. 355-358 (Proceedings of the International Conference on Sensing Technology, ICST).
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abstract = "In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1{\%} H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1{\%} H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.",
author = "Chen, {Wei Cheng} and Huey-Ing Chen and Chou, {Po Cheng} and Chang, {Ching Hong} and Chiou, {Yung Jen} and Wen-Chau Liu",
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Chen, WC, Chen, H-I, Chou, PC, Chang, CH, Chiou, YJ & Liu, W-C 2016, Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode. in 2015 9th International Conference on Sensing Technology, ICST 2015., 7438422, Proceedings of the International Conference on Sensing Technology, ICST, vol. 2016-March, IEEE Computer Society, pp. 355-358, 9th International Conference on Sensing Technology, ICST 2015, Auckland, New Zealand, 15-12-08. https://doi.org/10.1109/ICSensT.2015.7438422

Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode. / Chen, Wei Cheng; Chen, Huey-Ing; Chou, Po Cheng; Chang, Ching Hong; Chiou, Yung Jen; Liu, Wen-Chau.

2015 9th International Conference on Sensing Technology, ICST 2015. IEEE Computer Society, 2016. p. 355-358 7438422 (Proceedings of the International Conference on Sensing Technology, ICST; Vol. 2016-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen WC, Chen H-I, Chou PC, Chang CH, Chiou YJ, Liu W-C. Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode. In 2015 9th International Conference on Sensing Technology, ICST 2015. IEEE Computer Society. 2016. p. 355-358. 7438422. (Proceedings of the International Conference on Sensing Technology, ICST). https://doi.org/10.1109/ICSensT.2015.7438422