Abstract
An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.
Original language | English |
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Pages (from-to) | 1192-1194 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 43 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering