Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

Y. Y. Tsai; K. W. Lin; H. I. Chen; C. W. Hung; T. P. Chen; W. C. Liu

doi:10.1049/el:20072041

Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

Y. Y. Tsai, K. W. Lin, H. I. Chen, C. W. Hung, T. P. Chen, W. C. Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H₂/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H₂/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N ₂), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

Original language	English
Pages (from-to)	1192-1194
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	22
DOIs	https://doi.org/10.1049/el:20072041
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20072041

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title = "Hydrogen sensing performance of Pt-oxide-GaN Schottky diode",

abstract = "An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.",

author = "Tsai, {Y. Y.} and Lin, {K. W.} and Chen, {H. I.} and Hung, {C. W.} and Chen, {T. P.} and Liu, {W. C.}",

year = "2007",

doi = "10.1049/el:20072041",

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volume = "43",

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journal = "Electronics Letters",

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T1 - Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

AU - Tsai, Y. Y.

AU - Lin, K. W.

AU - Chen, H. I.

AU - Hung, C. W.

AU - Chen, T. P.

AU - Liu, W. C.

PY - 2007

Y1 - 2007

N2 - An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

AB - An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

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EP - 1194

JO - Electronics Letters

JF - Electronics Letters

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Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

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