An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering