TY - JOUR
T1 - Hydrogen sensing performances of Pt/i-ZnO/GaN metal-insulator-semiconductor diodes
AU - Lee, Hsin Ying
AU - Huang, Hung Lin
AU - Lee, Ching Ting
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan, Republic of China, under contract No. NSC99-2221-E-006-106-MY3.
Funding Information:
Ching-Ting Lee was born in Taoyuan, Taiwan, R.O.C., on November 1, 1949. He received his B.S. and M.S. degrees in the Electrical Engineering Department of the National Cheng Kung University, Taiwan, in 1972 and 1974, respectively. He received his Ph.D. degree from the Electrical Engineering Department from the Carnegie-Mellon University, Pittsburgh, PA, in 1982. He worked at Chung Shan Institute of Science and Technology, before he joined the Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, as a professor in 1990. He joined on National Cheng Kung University as the Dean of the College of Electrical Engineering and Computer Science from 2003 to 2009, and now is the professor at the Institute of Microelectronics, Department of Electrical Engineering of the National Cheng Kung University. Among the awards and honors, he has received are the Fellow of IEEE, the Fellow of IET, the Outstanding Research Professor Fellowship from the National Science Council (NSC), Republic of China, the Distinguish Service Award from the Institute of Electrical Engineering Society, the Optical Engineering Medal from the Optical Engineering Society, the Distinguish Electrical Engineering Professor Award from the Chinese Institute of Electrical Engineering Society, the Distinguish Engineering Professor Award from the Chinese Institute of Engineers, and the Excellent Research Award of Technology Transfer and Cooperation between Industry and University from the National Cheng Kung University. He is a distinguished research professor of the National Cheng Kung University. His current research interests include nano materials and devices, light emission of Si nanoclusters, solar cells, GaN-based light-emitting diodes and lasers, GaN-based field effect transistors. His research activities have also investigated III–V semiconductor lasers, photodetectors and high-speed electronic devices, and their associated integration for electrooptical integrated circuits.
PY - 2011/10/20
Y1 - 2011/10/20
N2 - In light of the same wurtzite structure and the similar lattice constant and band gap energy between ZnO and GaN-based semiconductors, a high quality intrinsic ZnO film is used as the insulating layer for the Pt/i-ZnO/GaN metal-insulator-semiconductor (MIS) hydrogen gas sensors. When the MIS hydrogen gas sensors are exposed to dilute hydrogen ambience, hydrogen dipoles are formed at the Pt/i-ZnO interface with electrons released back to the ZnO. The hydrogen adsorbed reaction leads to the reduction of the barrier height and the series resistance. When the Pt/i-ZnO(10 nm)/GaN hydrogen gas sensors are exposed to 10,000 ppm H2 at a room temperature, the resultant barrier height change is 211.9 meV and the series resistance is reduced from 21.4 kΩ to 13.4 kΩ. When the operation temperature increases to 500 K, the corresponding barrier height change is 124.5 meV while the series resistance reduces from 2.5 kΩ to 2.3 kΩ. The hydrogen absorption enthalpy at the interface is about -11.8 kJ/mol, which is the characteristic of exothermic reaction.
AB - In light of the same wurtzite structure and the similar lattice constant and band gap energy between ZnO and GaN-based semiconductors, a high quality intrinsic ZnO film is used as the insulating layer for the Pt/i-ZnO/GaN metal-insulator-semiconductor (MIS) hydrogen gas sensors. When the MIS hydrogen gas sensors are exposed to dilute hydrogen ambience, hydrogen dipoles are formed at the Pt/i-ZnO interface with electrons released back to the ZnO. The hydrogen adsorbed reaction leads to the reduction of the barrier height and the series resistance. When the Pt/i-ZnO(10 nm)/GaN hydrogen gas sensors are exposed to 10,000 ppm H2 at a room temperature, the resultant barrier height change is 211.9 meV and the series resistance is reduced from 21.4 kΩ to 13.4 kΩ. When the operation temperature increases to 500 K, the corresponding barrier height change is 124.5 meV while the series resistance reduces from 2.5 kΩ to 2.3 kΩ. The hydrogen absorption enthalpy at the interface is about -11.8 kJ/mol, which is the characteristic of exothermic reaction.
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U2 - 10.1016/j.snb.2011.05.001
DO - 10.1016/j.snb.2011.05.001
M3 - Article
AN - SCOPUS:79959654303
VL - 157
SP - 460
EP - 465
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 2
ER -