Hydrogen sensing properties of a metamorphic high electron mobility transistor

Tsung Han Tsai; Huey Ing Chen; Chung Fu Chang; Po Shun Chiu; Yi Chun Liu; Li Yang Chen; Tzu Pin Chen; Wen Chau Liu

doi:10.1063/1.3052698

Hydrogen sensing properties of a metamorphic high electron mobility transistor

Tsung Han Tsai, Huey Ing Chen, Chung Fu Chang, Po Shun Chiu, Yi Chun Liu, Li Yang Chen, Tzu Pin Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.

Original language	English
Article number	012102
Journal	Applied Physics Letters
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.3052698
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3052698

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title = "Hydrogen sensing properties of a metamorphic high electron mobility transistor",

abstract = "Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Chang, {Chung Fu} and Chiu, {Po Shun} and Liu, {Yi Chun} and Chen, {Li Yang} and Chen, {Tzu Pin} and Liu, {Wen Chau}",

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doi = "10.1063/1.3052698",

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T1 - Hydrogen sensing properties of a metamorphic high electron mobility transistor

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Chang, Chung Fu

AU - Chiu, Po Shun

AU - Liu, Yi Chun

AU - Chen, Li Yang

AU - Chen, Tzu Pin

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97–2221-E-006–237-MY3.

PY - 2009

Y1 - 2009

N2 - Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.

AB - Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.

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Hydrogen sensing properties of a metamorphic high electron mobility transistor

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