Hydrogen sensing properties of a metamorphic high electron mobility transistor

Tsung Han Tsai, Huey Ing Chen, Chung Fu Chang, Po Shun Chiu, Yi Chun Liu, Li Yang Chen, Tzu Pin Chen, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Hydrogen sensing properties of a metamorphic high electron mobility transistor (MHEMT) are studied and presented. This MHEMT-based sensor exhibits good pinch-off characteristics upon exposing to hydrogen gases. Besides, the current variation and threshold voltage shift of the studied device reveal larger response under hydrogen-containing conditions. The studied device shows fast responses and exhibits a large current variation magnitude of the order of milliamperes and a relatively low sensitivity due to the high baseline current. Based on the Langmiur isotherm, experimental current responses are consistent with the simulated curve. This indicates that the surface reaction is the rate limited factor for this hydrogen adsorption reaction.

Original languageEnglish
Article number012102
JournalApplied Physics Letters
Volume94
Issue number1
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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