Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience

Chi Shiang Hsu, Huey Ing Chen, Po Cheng Chou, Jian Kai Liou, Chun Chia Chen, Chung Fu Chang, Wen Chau Liu

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Abstract

The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H2N2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (20s) is acquired when the hydrogen concentration is higher than 1-ppm H2N2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

Original languageEnglish
Article number6449275
Pages (from-to)1787-1793
Number of pages7
JournalIEEE Sensors Journal
Volume13
Issue number5
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Hsu, C. S., Chen, H. I., Chou, P. C., Liou, J. K., Chen, C. C., Chang, C. F., & Liu, W. C. (2013). Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience. IEEE Sensors Journal, 13(5), 1787-1793. [6449275]. https://doi.org/10.1109/JSEN.2013.2243430