Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience

Chi Shiang Hsu; Huey Ing Chen; Po Cheng Chou; Jian Kai Liou; Chun Chia Chen; Chung Fu Chang; Wen Chau Liu

doi:10.1109/JSEN.2013.2243430

Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience

Chi Shiang Hsu, Huey Ing Chen, Po Cheng Chou, Jian Kai Liou, Chun Chia Chen, Chung Fu Chang, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H₂N₂. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (20s) is acquired when the hydrogen concentration is higher than 1-ppm H₂N₂ at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

Original language	English
Article number	6449275
Pages (from-to)	1787-1793
Number of pages	7
Journal	IEEE Sensors Journal
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/JSEN.2013.2243430
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience",

abstract = "The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H2N2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (20s) is acquired when the hydrogen concentration is higher than 1-ppm H2N2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.",

author = "Hsu, {Chi Shiang} and Chen, {Huey Ing} and Chou, {Po Cheng} and Liou, {Jian Kai} and Chen, {Chun Chia} and Chang, {Chung Fu} and Liu, {Wen Chau}",

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T1 - Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience

AU - Hsu, Chi Shiang

AU - Chen, Huey Ing

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Chen, Chun Chia

AU - Chang, Chung Fu

AU - Liu, Wen Chau

PY - 2013

Y1 - 2013

N2 - The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H2N2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (20s) is acquired when the hydrogen concentration is higher than 1-ppm H2N2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

AB - The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30°C to 250°C. In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb H2N2. Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time (20s) is acquired when the hydrogen concentration is higher than 1-ppm H2N2 at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.

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Hydrogen-sensing properties of a Pd/AlGaN/GaN-based field-effect transistor under a nitrogen ambience

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