Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

Tsung Han Tsai; Huey Ing Chen; Tai Yu Chen; Li Yang Chen; Yi Jung Liu; Chien Chang Huang; Kai Siang Hsu; Wen Chau Liu

doi:10.1016/j.ijhydene.2010.01.058

Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

Tsung Han Tsai, Huey Ing Chen, Tai Yu Chen, Li Yang Chen, Yi Jung Liu, Chien Chang Huang, Kai Siang Hsu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A Pd/oxide/InAlAs metal-oxide-semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H₂/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications.

Original language	English
Pages (from-to)	3903-3907
Number of pages	5
Journal	International Journal of Hydrogen Energy
Volume	35
Issue number	8
DOIs	https://doi.org/10.1016/j.ijhydene.2010.01.058
Publication status	Published - 2010 Apr

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ijhydene.2010.01.058

Cite this

@article{a35b83c8a0be4f41b883481b70cba2b8,

title = "Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor",

abstract = "A Pd/oxide/InAlAs metal-oxide-semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H2/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Chen, {Tai Yu} and Chen, {Li Yang} and Liu, {Yi Jung} and Huang, {Chien Chang} and Hsu, {Kai Siang} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-237-MY3 .",

year = "2010",

month = apr,

doi = "10.1016/j.ijhydene.2010.01.058",

language = "English",

volume = "35",

pages = "3903--3907",

journal = "International Journal of Hydrogen Energy",

issn = "0360-3199",

publisher = "Elsevier Limited",

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}

TY - JOUR

T1 - Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Chen, Tai Yu

AU - Chen, Li Yang

AU - Liu, Yi Jung

AU - Huang, Chien Chang

AU - Hsu, Kai Siang

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-97-2221-E-006-237-MY3 .

PY - 2010/4

Y1 - 2010/4

N2 - A Pd/oxide/InAlAs metal-oxide-semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H2/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications.

AB - A Pd/oxide/InAlAs metal-oxide-semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H2/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications.

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U2 - 10.1016/j.ijhydene.2010.01.058

DO - 10.1016/j.ijhydene.2010.01.058

M3 - Article

AN - SCOPUS:77950297760

SN - 0360-3199

VL - 35

SP - 3903

EP - 3907

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

IS - 8

ER -

Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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