Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Chung Fu Chang; Tsung Han Tsai; Huey Ing Chen; Kun Wei Lin; Tzu Pin Chen; Li Yang Chen; Yi Chun Liu; Wen Chau Liu

doi:10.1016/j.elecom.2008.10.031

Hydrogen sensing properties of a Pd/SiO₂/AlGaN-based MOS diode

Chung Fu Chang, Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Tzu Pin Chen, Li Yang Chen, Yi Chun Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO₂ at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO₂ layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 10⁵) is comparable to that of the MS one at 150 °C (2.04 × 10⁵). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO₂ interface.

Original language	English
Pages (from-to)	65-67
Number of pages	3
Journal	Electrochemistry Communications
Volume	11
Issue number	1
DOIs	https://doi.org/10.1016/j.elecom.2008.10.031
Publication status	Published - 2009 Jan

All Science Journal Classification (ASJC) codes

Electrochemistry

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10.1016/j.elecom.2008.10.031

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@article{794a65f0c87e48faa2c392ea390368bd,

title = "Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode",

abstract = "Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.",

author = "Chang, {Chung Fu} and Tsai, {Tsung Han} and Chen, {Huey Ing} and Lin, {Kun Wei} and Chen, {Tzu Pin} and Chen, {Li Yang} and Liu, {Yi Chun} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-95-2221-E-006-426-MY2.",

year = "2009",

month = jan,

doi = "10.1016/j.elecom.2008.10.031",

language = "English",

volume = "11",

pages = "65--67",

journal = "Electrochemistry Communications",

issn = "1388-2481",

publisher = "Elsevier Inc.",

number = "1",

}

TY - JOUR

T1 - Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

AU - Chang, Chung Fu

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Chen, Tzu Pin

AU - Chen, Li Yang

AU - Liu, Yi Chun

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC-95-2221-E-006-426-MY2.

PY - 2009/1

Y1 - 2009/1

N2 - Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.

AB - Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.

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DO - 10.1016/j.elecom.2008.10.031

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SN - 1388-2481

VL - 11

SP - 65

EP - 67

JO - Electrochemistry Communications

JF - Electrochemistry Communications

IS - 1

ER -

Hydrogen sensing properties of a Pd/SiO₂/AlGaN-based MOS diode

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