Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Chung Fu Chang, Tsung Han Tsai, Huey-Ing Chen, Kun Wei Lin, Tzu Pin Chen, Li Yang Chen, Yi Chun Liu, Wen-Chau Liu

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.

Original languageEnglish
Pages (from-to)65-67
Number of pages3
JournalElectrochemistry Communications
Volume11
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Hydrogen
Diodes
Metals
Semiconductor materials
Low temperature operations
Reaction rates
Electric fields
Polarization
Kinetics
aluminum gallium nitride
Temperature

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Chang, Chung Fu ; Tsai, Tsung Han ; Chen, Huey-Ing ; Lin, Kun Wei ; Chen, Tzu Pin ; Chen, Li Yang ; Liu, Yi Chun ; Liu, Wen-Chau. / Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode. In: Electrochemistry Communications. 2009 ; Vol. 11, No. 1. pp. 65-67.
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abstract = "Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.",
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Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode. / Chang, Chung Fu; Tsai, Tsung Han; Chen, Huey-Ing; Lin, Kun Wei; Chen, Tzu Pin; Chen, Li Yang; Liu, Yi Chun; Liu, Wen-Chau.

In: Electrochemistry Communications, Vol. 11, No. 1, 01.01.2009, p. 65-67.

Research output: Contribution to journalArticle

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AU - Chen, Li Yang

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AB - Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 105) is comparable to that of the MS one at 150 °C (2.04 × 105). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO2 interface.

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