Hydrogen sensing properties of a Pt-oxide-Al0.24Ga 0.76As high-electron-mobility transistor

Chin Chuan Cheng; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Wen Chau Liu

doi:10.1063/1.1883721

Hydrogen sensing properties of a Pt-oxide-Al_0.24Ga _0.76As high-electron-mobility transistor

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

The interesting hydrogen sensing performances of a Pt-oxide-AlGaAs (MOS) high electron mobility transistor (HEMT) are studied and demonstrated. The effects of hydrogen adsorption on device performances such as the threshold voltage shift ΔV_th, drain saturation current variation ΔI_DS, and transient response are presented. Δ.V _th and ΔI_DS decreased with increasing operating temperature. This suggests that, at higher temperature, less hydrogen atoms diffuse through the Pt bulk and reach the interface between the Pt metal and oxide layer resulting from the relatively faster formation rate of hydroxyl on the Pt surface. The response curves of the studied Pt-AlGaAs MOS HEMT show various profiles at different temperatures. The influences of hydrogen concentration and temperature on the interface sites occupied by adsorbed atoms are also studied.

Original language	English
Article number	112103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.1883721
Publication status	Published - 2005 Mar 14

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1883721

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Cheng, C. C., Tsai, Y. Y., Lin, K. W., Chen, H. I., & Liu, W. C. (2005). Hydrogen sensing properties of a Pt-oxide-Al_0.24Ga _0.76As high-electron-mobility transistor. Applied Physics Letters, 86(11), 1-3. [112103]. https://doi.org/10.1063/1.1883721

@article{ba842a214bfc475d8271bc92894ea657,

title = "Hydrogen sensing properties of a Pt-oxide-Al0.24Ga 0.76As high-electron-mobility transistor",

abstract = "The interesting hydrogen sensing performances of a Pt-oxide-AlGaAs (MOS) high electron mobility transistor (HEMT) are studied and demonstrated. The effects of hydrogen adsorption on device performances such as the threshold voltage shift ΔVth, drain saturation current variation ΔIDS, and transient response are presented. Δ.V th and ΔIDS decreased with increasing operating temperature. This suggests that, at higher temperature, less hydrogen atoms diffuse through the Pt bulk and reach the interface between the Pt metal and oxide layer resulting from the relatively faster formation rate of hydroxyl on the Pt surface. The response curves of the studied Pt-AlGaAs MOS HEMT show various profiles at different temperatures. The influences of hydrogen concentration and temperature on the interface sites occupied by adsorbed atoms are also studied.",

author = "Cheng, {Chin Chuan} and Tsai, {Yan Ying} and Lin, {Kun Wei} and Chen, {Huey Ing} and Liu, {Wen Chau}",

year = "2005",

month = mar,

day = "14",

doi = "10.1063/1.1883721",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Hydrogen sensing properties of a Pt-oxide-Al0.24Ga 0.76As high-electron-mobility transistor

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Liu, Wen Chau

PY - 2005/3/14

Y1 - 2005/3/14

N2 - The interesting hydrogen sensing performances of a Pt-oxide-AlGaAs (MOS) high electron mobility transistor (HEMT) are studied and demonstrated. The effects of hydrogen adsorption on device performances such as the threshold voltage shift ΔVth, drain saturation current variation ΔIDS, and transient response are presented. Δ.V th and ΔIDS decreased with increasing operating temperature. This suggests that, at higher temperature, less hydrogen atoms diffuse through the Pt bulk and reach the interface between the Pt metal and oxide layer resulting from the relatively faster formation rate of hydroxyl on the Pt surface. The response curves of the studied Pt-AlGaAs MOS HEMT show various profiles at different temperatures. The influences of hydrogen concentration and temperature on the interface sites occupied by adsorbed atoms are also studied.

AB - The interesting hydrogen sensing performances of a Pt-oxide-AlGaAs (MOS) high electron mobility transistor (HEMT) are studied and demonstrated. The effects of hydrogen adsorption on device performances such as the threshold voltage shift ΔVth, drain saturation current variation ΔIDS, and transient response are presented. Δ.V th and ΔIDS decreased with increasing operating temperature. This suggests that, at higher temperature, less hydrogen atoms diffuse through the Pt bulk and reach the interface between the Pt metal and oxide layer resulting from the relatively faster formation rate of hydroxyl on the Pt surface. The response curves of the studied Pt-AlGaAs MOS HEMT show various profiles at different temperatures. The influences of hydrogen concentration and temperature on the interface sites occupied by adsorbed atoms are also studied.

UR - http://www.scopus.com/inward/record.url?scp=17944370831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17944370831&partnerID=8YFLogxK

U2 - 10.1063/1.1883721

DO - 10.1063/1.1883721

M3 - Article

AN - SCOPUS:17944370831

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112103

ER -