Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

Wen Chau Liu, Hsi Jen Pan, Huey Ing Chen, Kun Wei Lin, Shiou Ying Cheng, Kuo Hui Yu

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.

Original languageEnglish
Pages (from-to)1938-1944
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number9
DOIs
Publication statusPublished - 2001 Sep 1

Fingerprint

Hydrogen
Diodes
Metals
Sensors
Oxides
Adsorption
Oxide semiconductors
Fermi level
Reaction kinetics
Partial pressure
Isotherms
Atoms
Water
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, Wen Chau ; Pan, Hsi Jen ; Chen, Huey Ing ; Lin, Kun Wei ; Cheng, Shiou Ying ; Yu, Kuo Hui. / Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor. In: IEEE Transactions on Electron Devices. 2001 ; Vol. 48, No. 9. pp. 1938-1944.
@article{2a01c81a0d284bd3bb7be4fb6acfb8fb,
title = "Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor",
abstract = "Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.",
author = "Liu, {Wen Chau} and Pan, {Hsi Jen} and Chen, {Huey Ing} and Lin, {Kun Wei} and Cheng, {Shiou Ying} and Yu, {Kuo Hui}",
year = "2001",
month = "9",
day = "1",
doi = "10.1109/16.944180",
language = "English",
volume = "48",
pages = "1938--1944",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor. / Liu, Wen Chau; Pan, Hsi Jen; Chen, Huey Ing; Lin, Kun Wei; Cheng, Shiou Ying; Yu, Kuo Hui.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 9, 01.09.2001, p. 1938-1944.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

AU - Liu, Wen Chau

AU - Pan, Hsi Jen

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Cheng, Shiou Ying

AU - Yu, Kuo Hui

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.

AB - Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.

UR - http://www.scopus.com/inward/record.url?scp=0035445385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035445385&partnerID=8YFLogxK

U2 - 10.1109/16.944180

DO - 10.1109/16.944180

M3 - Article

AN - SCOPUS:0035445385

VL - 48

SP - 1938

EP - 1944

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -