Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Optical Pixel Sensor with High Sensitivity under Ambient Illumination

Chih Lung Lin, Chia En Wu, Po Syun Chen, Ching Heng Chang, Chih Cheng Hsu, Jian Shen Yu, Chun Chang, Ya Hui Tseng

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This letter develops an optical pixel sensor that is based on hydrogenated amorphous silicon thin-film transistors. Exploiting the photo sensitivity of the photo TFTs and combining different color filters, the proposed sensor can sense an optical input signal of a specified color under high ambient illumination conditions. Measurements indicate that the proposed pixel sensor effectively reacts to the optical input signal under light intensities from 873 to 12,910 lux, proving that the sensor is highly reliable under strong ambient illumination.

Original languageEnglish
Pages (from-to)1446-1449
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number11
DOIs
Publication statusPublished - 2016 Nov

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Thin film transistors
Amorphous silicon
Lighting
Pixels
Sensors
Color
Photosensitivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lin, Chih Lung ; Wu, Chia En ; Chen, Po Syun ; Chang, Ching Heng ; Hsu, Chih Cheng ; Yu, Jian Shen ; Chang, Chun ; Tseng, Ya Hui. / Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Optical Pixel Sensor with High Sensitivity under Ambient Illumination. In: IEEE Electron Device Letters. 2016 ; Vol. 37, No. 11. pp. 1446-1449.
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Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Optical Pixel Sensor with High Sensitivity under Ambient Illumination. / Lin, Chih Lung; Wu, Chia En; Chen, Po Syun; Chang, Ching Heng; Hsu, Chih Cheng; Yu, Jian Shen; Chang, Chun; Tseng, Ya Hui.

In: IEEE Electron Device Letters, Vol. 37, No. 11, 11.2016, p. 1446-1449.

Research output: Contribution to journalArticle

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