Identification of Mn-related Raman modes in Mn-doped ZnO thin films

Y. M. Hu; C. Y. Wang; S. S. Lee; T. C. Han; W. Y. Chou; G. J. Chen

doi:10.1002/jrs.2695

Identification of Mn-related Raman modes in Mn-doped ZnO thin films

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, G. J. Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm^-1 is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm^-1 could be a characteristic mode of Mn₂O₃. The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects.

Original language	English
Pages (from-to)	434-437
Number of pages	4
Journal	Journal of Raman Spectroscopy
Volume	42
Issue number	3
DOIs	https://doi.org/10.1002/jrs.2695
Publication status	Published - 2011 Mar

All Science Journal Classification (ASJC) codes

General Materials Science
Spectroscopy

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title = "Identification of Mn-related Raman modes in Mn-doped ZnO thin films",

abstract = "This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm-1 is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm-1 could be a characteristic mode of Mn2O3. The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects.",

author = "Hu, {Y. M.} and Wang, {C. Y.} and Lee, {S. S.} and Han, {T. C.} and Chou, {W. Y.} and Chen, {G. J.}",

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T1 - Identification of Mn-related Raman modes in Mn-doped ZnO thin films

AU - Hu, Y. M.

AU - Wang, C. Y.

AU - Lee, S. S.

AU - Han, T. C.

AU - Chou, W. Y.

AU - Chen, G. J.

PY - 2011/3

Y1 - 2011/3

N2 - This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm-1 is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm-1 could be a characteristic mode of Mn2O3. The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects.

AB - This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm-1 is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm-1 could be a characteristic mode of Mn2O3. The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects.

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Identification of Mn-related Raman modes in Mn-doped ZnO thin films

Abstract

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