Identification of Mn-related Raman modes in Mn-doped ZnO thin films

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, Wei-Yang Chou, G. J. Chen

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

This article aims to investigate the Raman modes present in Mn-doped ZnO thin films that are deposited using the magnetron co-sputtering method. A broad band ranging from 500 to 590 cm-1 is present in the Raman spectra of heavily Mn-doped ZnO films. The multi-peak-fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm-1 could be a characteristic mode of Mn2O3. The results of this study suggest that the origin of the Raman peaks in Mn-doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn-related oxides and intrinsic host-lattice defects.

Original languageEnglish
Pages (from-to)434-437
Number of pages4
JournalJournal of Raman Spectroscopy
Volume42
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

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Thin films
Crystal defects
Oxides
Sputtering
Raman scattering
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Spectroscopy

Cite this

Hu, Y. M. ; Wang, C. Y. ; Lee, S. S. ; Han, T. C. ; Chou, Wei-Yang ; Chen, G. J. / Identification of Mn-related Raman modes in Mn-doped ZnO thin films. In: Journal of Raman Spectroscopy. 2011 ; Vol. 42, No. 3. pp. 434-437.
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Identification of Mn-related Raman modes in Mn-doped ZnO thin films. / Hu, Y. M.; Wang, C. Y.; Lee, S. S.; Han, T. C.; Chou, Wei-Yang; Chen, G. J.

In: Journal of Raman Spectroscopy, Vol. 42, No. 3, 01.03.2011, p. 434-437.

Research output: Contribution to journalArticle

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