Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy

Chuan-Pu Liu, William L. Henstrom, David G. Cahill, J. Murray Gibson

Research output: Contribution to journalConference article

Abstract

As a consequence of strain relaxation, Ge coherent islands on Si(001) substrates evolve to different shapes as islands grow. By measuring the size and the strain simultaneously in a large population of individual islands using two simple and robust plan-view transmission electron microscopy-based techniques, we can identify island shapes easily because island shape is a function of strain. We briefly introduce the mechanisms of these two techniques. We then show that there is a metastable shape of Ge islands involved in the shape transition between pyramids and domes. The strain relaxation changes discontinuously as islands grow from pyramids to the metastable form and then finally to domes indicating that the shape transition between pyramids and domes is first order. We also show that the shape of this metastable island is a truncated dome and the faceted planes are {103}.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume583
Publication statusPublished - 2000 Dec 11
EventSelf-Organized Processes in Semiconductor Alloys - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 2

Fingerprint

Domes
Transmission electron microscopy
Strain relaxation
transmission electron microscopy
domes
pyramids
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy",
abstract = "As a consequence of strain relaxation, Ge coherent islands on Si(001) substrates evolve to different shapes as islands grow. By measuring the size and the strain simultaneously in a large population of individual islands using two simple and robust plan-view transmission electron microscopy-based techniques, we can identify island shapes easily because island shape is a function of strain. We briefly introduce the mechanisms of these two techniques. We then show that there is a metastable shape of Ge islands involved in the shape transition between pyramids and domes. The strain relaxation changes discontinuously as islands grow from pyramids to the metastable form and then finally to domes indicating that the shape transition between pyramids and domes is first order. We also show that the shape of this metastable island is a truncated dome and the faceted planes are {103}.",
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Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy. / Liu, Chuan-Pu; Henstrom, William L.; Cahill, David G.; Murray Gibson, J.

In: Materials Research Society Symposium - Proceedings, Vol. 583, 11.12.2000, p. 137-142.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy

AU - Liu, Chuan-Pu

AU - Henstrom, William L.

AU - Cahill, David G.

AU - Murray Gibson, J.

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