II-VI light emitting diode with low operation voltage

Wen How Lan, Y. T. Cheng, Alpha C.H. Lin, Y. T. Cheng, H. Chang, Wen Ray Chen, Yan Kuin Su, Shoou-Jinn Chang, W. C. Chou, C. S. Yang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K2Cr2O7: H2SO4: H2O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

Original languageEnglish
Pages (from-to)570-578
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

Fingerprint

Diode
Light emitting diodes
light emitting diodes
Voltage
Electric potential
electric potential
Gallium Arsenide
Potassium Dichromate
Ohmic contacts
Photolithography
Buffer layers
Blue Light
CdTe
Semiconductor quantum wells
Etching
Multilayers
Diodes
mesas
Quantum Well
photolithography

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Lan, W. H., Cheng, Y. T., Lin, A. C. H., Cheng, Y. T., Chang, H., Chen, W. R., ... Yang, C. S. (2000). II-VI light emitting diode with low operation voltage. Proceedings of SPIE - The International Society for Optical Engineering, 4078, 570-578.
Lan, Wen How ; Cheng, Y. T. ; Lin, Alpha C.H. ; Cheng, Y. T. ; Chang, H. ; Chen, Wen Ray ; Su, Yan Kuin ; Chang, Shoou-Jinn ; Chou, W. C. ; Yang, C. S. / II-VI light emitting diode with low operation voltage. In: Proceedings of SPIE - The International Society for Optical Engineering. 2000 ; Vol. 4078. pp. 570-578.
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title = "II-VI light emitting diode with low operation voltage",
abstract = "In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K2Cr2O7: H2SO4: H2O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.",
author = "Lan, {Wen How} and Cheng, {Y. T.} and Lin, {Alpha C.H.} and Cheng, {Y. T.} and H. Chang and Chen, {Wen Ray} and Su, {Yan Kuin} and Shoou-Jinn Chang and Chou, {W. C.} and Yang, {C. S.}",
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Lan, WH, Cheng, YT, Lin, ACH, Cheng, YT, Chang, H, Chen, WR, Su, YK, Chang, S-J, Chou, WC & Yang, CS 2000, 'II-VI light emitting diode with low operation voltage', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4078, pp. 570-578.

II-VI light emitting diode with low operation voltage. / Lan, Wen How; Cheng, Y. T.; Lin, Alpha C.H.; Cheng, Y. T.; Chang, H.; Chen, Wen Ray; Su, Yan Kuin; Chang, Shoou-Jinn; Chou, W. C.; Yang, C. S.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 570-578.

Research output: Contribution to journalConference article

TY - JOUR

T1 - II-VI light emitting diode with low operation voltage

AU - Lan, Wen How

AU - Cheng, Y. T.

AU - Lin, Alpha C.H.

AU - Cheng, Y. T.

AU - Chang, H.

AU - Chen, Wen Ray

AU - Su, Yan Kuin

AU - Chang, Shoou-Jinn

AU - Chou, W. C.

AU - Yang, C. S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K2Cr2O7: H2SO4: H2O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

AB - In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K2Cr2O7: H2SO4: H2O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

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M3 - Conference article

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VL - 4078

SP - 570

EP - 578

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

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Lan WH, Cheng YT, Lin ACH, Cheng YT, Chang H, Chen WR et al. II-VI light emitting diode with low operation voltage. Proceedings of SPIE - The International Society for Optical Engineering. 2000 Jan 1;4078:570-578.