II-VI light emitting diode with low operation voltage

Wen How Lan, Y. T. Cheng, Alpha C.H. Lin, Y. T. Cheng, H. Chang, Wen Ray Chen, Yan Kuin Su, Shoou Jinn Chang, W. C. Chou, C. S. Yang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4 V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te (6N), Cd(6N) on (001) GaAs n+ substrate. The structure consisted a GaAs:Si (n+) buffer layer, ZnSe:Cl (0.5 um), ZnSe(200 A)/ZnCdSe (100 A) multiple quantum well, ZnSe(200 A), ZnSe:N(0.3 um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300 A). Standard photolithography technology was done to fabricate the diode. The mesa etch was done by K2Cr2O7: H2SO4: H2O etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530 nm (room temperature) and 495 nm (30 K) with 2.4 V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

Original languageEnglish
Pages (from-to)570-578
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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