III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection

P. C. Chang; K. H. Lee; S. J. Chang; Y. K. Su; T. C. Lin; S. L. Wu

doi:10.1109/JSEN.2009.2034626

III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection

P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin, S. L. Wu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

Original language	English
Article number	5427256
Pages (from-to)	799-804
Number of pages	6
Journal	IEEE Sensors Journal
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/JSEN.2009.2034626
Publication status	Published - 2010 Mar 19

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection",

abstract = "III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.",

author = "Chang, {P. C.} and Lee, {K. H.} and Chang, {S. J.} and Su, {Y. K.} and Lin, {T. C.} and Wu, {S. L.}",

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T1 - III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection

AU - Chang, P. C.

AU - Lee, K. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Lin, T. C.

AU - Wu, S. L.

PY - 2010/3/19

Y1 - 2010/3/19

N2 - III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

AB - III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

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