Abstract
III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.
Original language | English |
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Article number | 5427256 |
Pages (from-to) | 799-804 |
Number of pages | 6 |
Journal | IEEE Sensors Journal |
Volume | 10 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 Mar 19 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Electrical and Electronic Engineering