Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

S. J. Chang; K. Takahet; J. Nakata

doi:10.1557/proc-301-299

Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

S. J. Chang, K. Takahet, J. Nakata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Rare Earth Doped Semiconductors
Publisher	Publ by Materials Research Society
Pages	299-304
Number of pages	6
ISBN (Print)	1558991972, 9781558991972
DOIs	https://doi.org/10.1557/proc-301-299
Publication status	Published - 1993
Event	Proceedings of the 1993 Materials Society Spring Meeting - San Francisco, CA, USA Duration: 1993 Apr 13 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	301
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Materials Society Spring Meeting
City	San Francisco, CA, USA
Period	93-04-13 → 93-04-15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-301-299

Cite this

@inproceedings{48995507351e43cda88b15f793abd960,

title = "Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors",

author = "Chang, {S. J.} and K. Takahet and J. Nakata",

year = "1993",

doi = "10.1557/proc-301-299",

language = "English",

isbn = "1558991972",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "299--304",

booktitle = "Rare Earth Doped Semiconductors",

}

Chang, SJ, Takahet, K & Nakata, J 1993, Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors. in Rare Earth Doped Semiconductors. Materials Research Society Symposium Proceedings, vol. 301, Publ by Materials Research Society, pp. 299-304, Proceedings of the 1993 Materials Society Spring Meeting, San Francisco, CA, USA, 93-04-13. https://doi.org/10.1557/proc-301-299

Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors. / Chang, S. J.; Takahet, K.; Nakata, J.
Rare Earth Doped Semiconductors. Publ by Materials Research Society, 1993. p. 299-304 (Materials Research Society Symposium Proceedings; Vol. 301).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

AU - Chang, S. J.

AU - Takahet, K.

AU - Nakata, J.

PY - 1993

Y1 - 1993

UR - http://www.scopus.com/inward/record.url?scp=0027915751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027915751&partnerID=8YFLogxK

U2 - 10.1557/proc-301-299

DO - 10.1557/proc-301-299

M3 - Conference contribution

AN - SCOPUS:0027915751

SN - 1558991972

SN - 9781558991972

T3 - Materials Research Society Symposium Proceedings

SP - 299

EP - 304

BT - Rare Earth Doped Semiconductors

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Materials Society Spring Meeting

Y2 - 13 April 1993 through 15 April 1993

ER -

Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

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Other

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