Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Yi Jung Liu; Chih Hung Yen; Chia Hao Hsu; Kuo Hui Yu; Li Yang Chen; Tsung Han Tsai; Wen Chau Liu

doi:10.1007/s10043-009-0113-5

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Yi Jung Liu, Chih Hung Yen, Chia Hao Hsu, Kuo Hui Yu, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In₂O₃)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In₂O₃ layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In₂O₃ layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

Original language	English
Pages (from-to)	575-577
Number of pages	3
Journal	Optical Review
Volume	16
Issue number	6
DOIs	https://doi.org/10.1007/s10043-009-0113-5
Publication status	Published - 2009 Dec 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1007/s10043-009-0113-5

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title = "Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes",

abstract = "An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.",

author = "Liu, {Yi Jung} and Yen, {Chih Hung} and Hsu, {Chia Hao} and Yu, {Kuo Hui} and Chen, {Li Yang} and Tsai, {Tsung Han} and Liu, {Wen Chau}",

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doi = "10.1007/s10043-009-0113-5",

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T1 - Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

AU - Liu, Yi Jung

AU - Yen, Chih Hung

AU - Hsu, Chia Hao

AU - Yu, Kuo Hui

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen Chau

PY - 2009/12/1

Y1 - 2009/12/1

N2 - An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

AB - An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

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AN - SCOPUS:71449120491

SN - 1340-6000

VL - 16

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EP - 577

JO - Optical Review

JF - Optical Review

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ER -

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

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