Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

Shin Ping Huang, Po Hsun Chen, Hong Chih Chen, Yu Zhe Zheng, Ann Kuo Chu, Yu Ching Tsao, Yu Shan Shih, Yu Xuan Wang, Chia Chuan Wu, Wei Chih Lai, Ting Chang Chang

Research output: Contribution to journalArticle

Abstract

This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.

Original languageEnglish
Article number8796401
Pages (from-to)1638-1641
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number10
DOIs
Publication statusPublished - 2019 Oct

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Huang, S. P., Chen, P. H., Chen, H. C., Zheng, Y. Z., Chu, A. K., Tsao, Y. C., ... Chang, T. C. (2019). Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors. IEEE Electron Device Letters, 40(10), 1638-1641. [8796401]. https://doi.org/10.1109/LED.2019.2935183