Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Shankar Sinha, Meng Hsueh Chiang, Mario M. Pelella

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

Original languageEnglish
Pages41-42
Number of pages2
Publication statusPublished - 2002 Jan 1
EventIEEE International SOI Conference - Williamsburg, VA, United States
Duration: 2002 Oct 72002 Oct 10

Other

OtherIEEE International SOI Conference
CountryUnited States
CityWilliamsburg, VA
Period02-10-0702-10-10

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Sinha, S., Chiang, M. H., & Pelella, M. M. (2002). Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology. 41-42. Paper presented at IEEE International SOI Conference, Williamsburg, VA, United States.