Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Shankar Sinha; Meng Hsueh Chiang; Mario M. Pelella

Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Shankar Sinha, Meng Hsueh Chiang, Mario M. Pelella

Research output: Contribution to conference › Paper › peer-review

Abstract

Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

Original language	English
Pages	41-42
Number of pages	2
Publication status	Published - 2002 Jan 1
Event	IEEE International SOI Conference - Williamsburg, VA, United States Duration: 2002 Oct 7 → 2002 Oct 10

Other

Other	IEEE International SOI Conference
Country/Territory	United States
City	Williamsburg, VA
Period	02-10-07 → 02-10-10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology",

abstract = "Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.",

author = "Shankar Sinha and Chiang, {Meng Hsueh} and Pelella, {Mario M.}",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "41--42",

note = "IEEE International SOI Conference ; Conference date: 07-10-2002 Through 10-10-2002",

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TY - CONF

T1 - Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

AU - Sinha, Shankar

AU - Chiang, Meng Hsueh

AU - Pelella, Mario M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

AB - Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036458456&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036458456

SP - 41

EP - 42

T2 - IEEE International SOI Conference

Y2 - 7 October 2002 through 10 October 2002

ER -

Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Abstract

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All Science Journal Classification (ASJC) codes

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