Impact of hot-hole injection on the characteristics of high-voltage mos transistors

Jone F. Chen; J. R. Lee; Kuo Ming Wu; C. M. Liu

doi:10.1109/ISE.2008.4814056

Impact of hot-hole injection on the characteristics of high-voltage mos transistors

Jone F. Chen, J. R. Lee, Kuo Ming Wu, C. M. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	ISE 13 - 13th International Symposium on Electrets, Proceedings
Pages	C114
DOIs	https://doi.org/10.1109/ISE.2008.4814056
Publication status	Published - 2008 Dec 1
Event	13th International Symposium on Electrets, ISE 13 - Tokyo, Japan Duration: 2008 Sept 15 → 2008 Sept 17

Publication series

Name	Proceedings - International Symposium on Electrets

Other

Other	13th International Symposium on Electrets, ISE 13
Country/Territory	Japan
City	Tokyo
Period	08-09-15 → 08-09-17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/ISE.2008.4814056

Cite this

@inproceedings{6231ae317b33467bb07d363fd209ec90,

title = "Impact of hot-hole injection on the characteristics of high-voltage mos transistors",

author = "Chen, {Jone F.} and Lee, {J. R.} and Wu, {Kuo Ming} and Liu, {C. M.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ISE.2008.4814056",

language = "English",

isbn = "9781424418503",

series = "Proceedings - International Symposium on Electrets",

pages = "C114",

booktitle = "ISE 13 - 13th International Symposium on Electrets, Proceedings",

note = "13th International Symposium on Electrets, ISE 13 ; Conference date: 15-09-2008 Through 17-09-2008",

}

Chen, JF, Lee, JR, Wu, KM & Liu, CM 2008, Impact of hot-hole injection on the characteristics of high-voltage mos transistors. in ISE 13 - 13th International Symposium on Electrets, Proceedings., 4814056, Proceedings - International Symposium on Electrets, pp. C114, 13th International Symposium on Electrets, ISE 13, Tokyo, Japan, 08-09-15. https://doi.org/10.1109/ISE.2008.4814056

TY - GEN

T1 - Impact of hot-hole injection on the characteristics of high-voltage mos transistors

AU - Chen, Jone F.

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Liu, C. M.

PY - 2008/12/1

Y1 - 2008/12/1

UR - http://www.scopus.com/inward/record.url?scp=67649550710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649550710&partnerID=8YFLogxK

U2 - 10.1109/ISE.2008.4814056

DO - 10.1109/ISE.2008.4814056

M3 - Conference contribution

AN - SCOPUS:67649550710

SN - 9781424418503

T3 - Proceedings - International Symposium on Electrets

SP - C114

BT - ISE 13 - 13th International Symposium on Electrets, Proceedings

T2 - 13th International Symposium on Electrets, ISE 13

Y2 - 15 September 2008 through 17 September 2008

ER -

Impact of hot-hole injection on the characteristics of high-voltage mos transistors

Publication series

Other

All Science Journal Classification (ASJC) codes

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