Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs

M. Poljak, M. Wang, S. Žonja, V. Derek, M. Ivanda, K. L. Wang, T. Suligoj

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Graphene field-effect transistors are fabricated using CVD-grown graphene and a wet transfer technique. Devices are characterized in terms of carrier mobility, contact resistance, output and transfer characteristics. We found that the mobility decreases and contact resistance increases with the decreasing graphene microstrip width. In addition, we found that graphene FET characteristics strongly depend on annealing time. The behavior of device characteristics is explained by discussing carrier scattering on defects and impurities, and the formation of pn-junctions in graphene.

Original languageEnglish
Title of host publication2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014 - Proceedings
PublisherIEEE Computer Society
Pages27-32
Number of pages6
ISBN (Print)9789532330816
DOIs
Publication statusPublished - 2014
Event2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014 - Opatija, Croatia
Duration: 2014 May 262014 May 30

Publication series

Name2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014 - Proceedings

Conference

Conference2014 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014
CountryCroatia
CityOpatija
Period14-05-2614-05-30

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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