Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Hsu Feng Chiu; San Lein Wu; Yee Shyi Chang; Shoou Jinn Chang; Jone Fang Chen; Shih Chang Tsai; Che Hua Hsu; Chien Ming Lai; Chia Wei Hsu; Osbert Cheng

doi:10.1063/1.4753997

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Hsu Feng Chiu, San Lein Wu, Yee Shyi Chang, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chien Ming Lai, Chia Wei Hsu, Osbert Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO ₂ interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

Original language	English
Article number	122105
Journal	Applied Physics Letters
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.4753997
Publication status	Published - 2012 Sept 17

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4753997

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@article{37dcd5512a01472a8b315084dd6a684f,

title = "Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise",

abstract = "The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.",

author = "{Feng Chiu}, Hsu and {Lein Wu}, San and {Shyi Chang}, Yee and {Jinn Chang}, Shoou and {Fang Chen}, Jone and {Chang Tsai}, Shih and {Hua Hsu}, Che and {Ming Lai}, Chien and {Wei Hsu}, Chia and Osbert Cheng",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, under Contract No. NSC 101-2221-E-230-013.",

year = "2012",

month = sep,

day = "17",

doi = "10.1063/1.4753997",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

AU - Feng Chiu, Hsu

AU - Lein Wu, San

AU - Shyi Chang, Yee

AU - Jinn Chang, Shoou

AU - Fang Chen, Jone

AU - Chang Tsai, Shih

AU - Hua Hsu, Che

AU - Ming Lai, Chien

AU - Wei Hsu, Chia

AU - Cheng, Osbert

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, under Contract No. NSC 101-2221-E-230-013.

PY - 2012/9/17

Y1 - 2012/9/17

N2 - The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

AB - The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

UR - http://www.scopus.com/inward/record.url?scp=84866870865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866870865&partnerID=8YFLogxK

U2 - 10.1063/1.4753997

DO - 10.1063/1.4753997

M3 - Article

AN - SCOPUS:84866870865

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122105

ER -

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Abstract

All Science Journal Classification (ASJC) codes

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