Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Hsu Feng Chiu, San Lein Wu, Yee Shyi Chang, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chien Ming Lai, Chia Wei Hsu, Osbert Cheng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The impact of post metal-deposition annealing (PMA) on the trap behavior of high-k/metal-gate metal-oxide-semiconductor field-effect transistors has been studied using drain current random telegraph noise (RTN). The RTN phenomenon is influenced by both trap positions and trap energy, thus corresponding with the PMA passivation mechanism. We found that trap positions in mono-metal-layer annealed (TiN annealed) devices are closer to the TiN/HfO 2 interface due to the substitution of nitrogen atoms by oxygen atoms inside the TiN layer. However, replaced nitrogen atoms from TaN can passivate nitrogen defects in TiN that improves device characteristics in dual-metal-layer annealed (TiN/TaN annealed) devices.

Original languageEnglish
Article number122105
JournalApplied Physics Letters
Volume101
Issue number12
DOIs
Publication statusPublished - 2012 Sep 17

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Feng Chiu, H., Lein Wu, S., Shyi Chang, Y., Jinn Chang, S., Fang Chen, J., Chang Tsai, S., Hua Hsu, C., Ming Lai, C., Wei Hsu, C., & Cheng, O. (2012). Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise. Applied Physics Letters, 101(12), [122105]. https://doi.org/10.1063/1.4753997