Impact of reducing shallow trench isolation mechanical stress on active length for 40nm n-type metal-oxide-semiconductor field-effect transistors

Yao Tsung Huang, San Lein Wu, Hau Yu Lin, Cheng Wen Kuo, Shoou Jinn Chang, De Gong Hong, Chung Yi Wu, Cheng Tung Huang, Osbert Cheng

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report an improved densification annealing process for sub atmospheric chemical vapor deposition (SACVD)-based shallow trench isolation (STI) to enhance n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) performance for 40nm node and beyond. Experimental results show that this improved STI densification process leads to lower compressive stress in the small active area compared with the standard STI process. This is beneficial to electron mobility and leads to an enhancement of on-current (ION). Moreover, comparable drain induced barrier lowering (DIBL) and subthreshold swing (SS) characteristics for both devices indicate that the improved densification process would no significant influences on process variations or dopant diffusions. Hence, the improved STI process can be adopted in 40nm complementary metal-oxide-semiconductor (CMOS) technology and beyond.

Original languageEnglish
Article number04DC21
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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