Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Si Hua Chen, Shang Wei Lian, Tzung Rang Wu, Tay-Rong Chang, Jia Ming Liou, Darsen Lu, Kuo-Hsing Kao, Nan Yow Chen, Wen Jay Lee, Jyun Hwei Tsai

Research output: Contribution to journalArticle

Abstract

The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

Original languageEnglish
Article number8704283
Pages (from-to)2509-2512
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume66
Issue number6
DOIs
Publication statusPublished - 2019 Jun 1

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Permittivity
Semiconductor materials
Poisson equation
Threshold voltage
Screening
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, Si Hua ; Lian, Shang Wei ; Wu, Tzung Rang ; Chang, Tay-Rong ; Liou, Jia Ming ; Lu, Darsen ; Kao, Kuo-Hsing ; Chen, Nan Yow ; Lee, Wen Jay ; Tsai, Jyun Hwei. / Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 6. pp. 2509-2512.
@article{25df045377884abab5bd5391b985d133,
title = "Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs",
abstract = "The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.",
author = "Chen, {Si Hua} and Lian, {Shang Wei} and Wu, {Tzung Rang} and Tay-Rong Chang and Liou, {Jia Ming} and Darsen Lu and Kuo-Hsing Kao and Chen, {Nan Yow} and Lee, {Wen Jay} and Tsai, {Jyun Hwei}",
year = "2019",
month = "6",
day = "1",
doi = "10.1109/TED.2019.2912058",
language = "English",
volume = "66",
pages = "2509--2512",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs. / Chen, Si Hua; Lian, Shang Wei; Wu, Tzung Rang; Chang, Tay-Rong; Liou, Jia Ming; Lu, Darsen; Kao, Kuo-Hsing; Chen, Nan Yow; Lee, Wen Jay; Tsai, Jyun Hwei.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 6, 8704283, 01.06.2019, p. 2509-2512.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

AU - Chen, Si Hua

AU - Lian, Shang Wei

AU - Wu, Tzung Rang

AU - Chang, Tay-Rong

AU - Liou, Jia Ming

AU - Lu, Darsen

AU - Kao, Kuo-Hsing

AU - Chen, Nan Yow

AU - Lee, Wen Jay

AU - Tsai, Jyun Hwei

PY - 2019/6/1

Y1 - 2019/6/1

N2 - The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

AB - The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

UR - http://www.scopus.com/inward/record.url?scp=85066030260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066030260&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2912058

DO - 10.1109/TED.2019.2912058

M3 - Article

AN - SCOPUS:85066030260

VL - 66

SP - 2509

EP - 2512

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

M1 - 8704283

ER -