Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Si Hua Chen, Shang Wei Lian, Tzung Rang Wu, Tay Rong Chang, Jia Ming Liou, Darsen D. Lu, Kuo Hsing Kao, Nan Yow Chen, Wen Jay Lee, Jyun Hwei Tsai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

Original languageEnglish
Article number8704283
Pages (from-to)2509-2512
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume66
Issue number6
DOIs
Publication statusPublished - 2019 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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