Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Si Hua Chen; Shang Wei Lian; Tzung Rang Wu; Tay Rong Chang; Jia Ming Liou; Darsen D. Lu; Kuo Hsing Kao; Nan Yow Chen; Wen Jay Lee; Jyun Hwei Tsai

doi:10.1109/TED.2019.2912058

Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Si Hua Chen, Shang Wei Lian, Tzung Rang Wu, Tay Rong Chang, Jia Ming Liou, Darsen D. Lu, Kuo Hsing Kao, Nan Yow Chen, Wen Jay Lee, Jyun Hwei Tsai

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

Original language	English
Article number	8704283
Pages (from-to)	2509-2512
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	6
DOIs	https://doi.org/10.1109/TED.2019.2912058
Publication status	Published - 2019 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs",

abstract = "The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.",

author = "Chen, {Si Hua} and Lian, {Shang Wei} and Wu, {Tzung Rang} and Chang, {Tay Rong} and Liou, {Jia Ming} and Lu, {Darsen D.} and Kao, {Kuo Hsing} and Chen, {Nan Yow} and Lee, {Wen Jay} and Tsai, {Jyun Hwei}",

note = "Funding Information: Manuscript received February 19, 2019; revised April 6, 2019; accepted April 11, 2019. Date of publication May 1, 2019; date of current version May 21, 2019. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant MOST 108-2636-E-006-004, Grant 108-2636-M-006-002, and Grant 107-2627-E-006-001. The review of this paper was arranged by Editor H. Wong. (Corresponding author: Kuo-Hsing Kao.) S.-H. Chen, T. R. Wu, and D. D. Lu are with the Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan 701, Taiwan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

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AU - Chen, Si Hua

AU - Lian, Shang Wei

AU - Wu, Tzung Rang

AU - Chang, Tay Rong

AU - Liou, Jia Ming

AU - Lu, Darsen D.

AU - Kao, Kuo Hsing

AU - Chen, Nan Yow

AU - Lee, Wen Jay

AU - Tsai, Jyun Hwei

N1 - Funding Information: Manuscript received February 19, 2019; revised April 6, 2019; accepted April 11, 2019. Date of publication May 1, 2019; date of current version May 21, 2019. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant MOST 108-2636-E-006-004, Grant 108-2636-M-006-002, and Grant 107-2627-E-006-001. The review of this paper was arranged by Editor H. Wong. (Corresponding author: Kuo-Hsing Kao.) S.-H. Chen, T. R. Wu, and D. D. Lu are with the Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan 701, Taiwan. Publisher Copyright: © 1963-2012 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

AB - The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

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Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

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